Studies of ferromagnetic MnAs in recent years have revealed a wide range of properties desirable for spintronic applications. Previously studied MnAs spin-light-emitting-diodes exhibited a low value of spin injection into the device active region. In this work, we have investigated injection of spin polarized electrons from MnAs into AlGaAs(n)/GaAs(i)/AlGaAs(p) n-i-p structures. The band-edge electroluminescence emitted from these devices has a saturation circular polarization of 26% at 7 K and B=2 T. Using optical pumping measurements the corresponding electron spin polarization was determined to be 52%. Emission persists up to room temperature, with a saturation circular polarization of 6% at B=2 T.

Control over the Te doping concentration is especially challenging in the mass-production of optically transparent, high-resistivity Te-doped GaSb crystals. Driven by the necessity to perform fast, robust, and non-destructive quality control of the Te doping homogeneity of the optically transparent large-diameter GaSb wafers, we correlated electronic and optical infrared properties of Te-doped GaSb crystals. The study was based on the experimental Hall and Fourier-Transform Infrared (FTIR) data collected from over 50 samples of the low-doped n-type material (carrier concentration of 6 × 1016 cm−3 to 7 × 1017 cm−3) and the Te-doped p-type GaSb (4.6 × 1015 cm−3 to 1 × 1016 cm−3). For the n-type GaSb, the analysis of the FTIR data was performed using free carrier absorption model, while for the p-type material, the absorption was modeled using inter-valence band absorption mechanism. Using the correlation between the Hall and the IR data, FTIR maps across the wafers allow a fast and reliable way to estimate carrier concentration profile within the wafer.

The magnetization reversal process of MnAs epitaxial films grown on semiconductor substrates was investigated by magneto-optical Kerr effect (MOKE) microscopy, magnetic hysteresis, and magnetoresistance measurements. While the stripe patterns with opposite magnetization in the α-phase of MnAs have been observed previously, we have observed domain dynamics on a vastly different length scale. MOKE images revealed domain nucleation and avalanche domain reversal, which are a collective behavior resulting from interactions among a large number of α-phase regions. The observed reversal processes are reflected in the magnetic hysteresis and magnetotransport measurements. These effects are strongly film thickness dependent.

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