The influence of dislocations on luminescence of InGaN/GaN multiple quantum wells was investigated by temperature-dependent and time-resolved room-temperature photoluminescence measurements and analyzed via localized-state ensemble model. The results show that dislocations decrease non-radiative recombination time and do not affect either radiative recombination time or non-radiative recombination mechanism. Moreover, dislocation-related broadening, increasing linearly with increased dislocation density, was found to take place. However, a significant part of spectral width (∼55 meV) is not defined by either dislocation-induced or alloy- and thermally-induced broadening, revealing the existence of other broadening mechanisms (e.g. carrier–carrier scattering-induced broadening).

The results of the study of the influence of Fe segregation into the unintentionally doped GaN channel layer in AlGaN/AlN/GaN heterostructures with Fe-doped GaN buffer layer on the electrical properties of two-dimensional electron gas are presented. A set of several samples was grown by metal-organic vapor-phase epitaxy and characterized by the van der Pauw method. The dependence of concentration and mobility of the two-dimensional electron gas on the channel layer thickness was analyzed theoretically by self-consistent solving of 1D Poisson and Schrödinger equations and scattering rate calculations within the momentum relaxation time approximation. It was found that both concentration and mobility decreases were responsible for the increase in the sheet resistance in the structures with a thinner channel layer, with a drop in mobility being not only due to ionized impurity scattering, but also due to a combined effect of weakening of screening, lower carrier energy and change in form-factors on scattering by interface roughness, dislocations and polar optical phonons.