Carbon nanotube field-effect transistors (CNT FETs) have many possible applications in future nanoelectronics due to their excellent properties. However, one of the major challenges regarding their performance is the noticeable gate hysteresis which is often displayed in their transfer characteristics. The hysteresis phenomenon is often attributed to water-mediated charge transfer between the CNT and the dielectric layer or the CNT and the water layer itself. In this study, we implement the usage of current versus time measurements in addition to the traditional transfer characteristics to accurately extract the time constants of the hysteresis of suspended and on-surface CNT FETs. Following a thorough study, we provide experimental evidence that the hysteresis phenomenon of suspended CNT FETs, as well as of on-surface CNT FETs which operate at low gate voltage regimes (|V g | < 3 V), is based on gate-induced, water-assisted redistribution of mobile charge on the SiO 2 surface, and is not related to charge injection from the CNT itself. Our model is confirmed by an electronic-force-microscopy-based measurement technique which enables us to quantify the temporal surface charge distribution while measuring CNT currents.

Humidity plays an important role in molecular electronics. It facilitates charge movement on top of dielectric layers and modifies the device transfer characteristics. Using two different methods to probe temporal charge redistribution on the surface of dielectrics, we were able to extract the surface humidity for the first time. The first method is based on the relaxation time constants of the current through carbon nanotube field-effect transistors (CNTFETs), and the second is based on electric force microscopy (EFM) measurements. Moreover, we found that applying external gate biases modifies the surface humidity. A theoretical model based on dielectrophoretic attraction between the water molecules and the substrate is introduced to explain this observation, and the results support our hypothesis. Furthermore, it is found that upon the adsorption of two to three layers of water the surface conductivity saturates.

Articles you may be interested inEffect of surface charge on water film nanoconfined between hydrophilic solid surfacesIn this paper, we present a quantitative method to measure charge density on dielectric layers using electrostatic force microscopy. As opposed to previous reports, our method, which is based on force curve measurements, does not require preliminary knowledge of the tip-sample capacitance and its derivatives. Using this approach, we have been able to quantify lateral and temporal SiO 2 surface charge distribution and have unveiled a gate-induced charge redistribution mechanism which takes place in the vicinity of grounded electrodes. We argue that this mechanism constitutes a dominant factor in the hysteresis phenomenon, which is frequently observed in the transfer characteristics of nano-scale devices. V C 2012 American Institute of Physics. [http://dx.

Carbon nanotube field effect transistors (CNT FETs) have many possible applications in future nano-electronics due to their excellent electrical properties. However, one of the major challenges regarding their performance is the noticeable gate hysteresis which is often displayed in their transfer characteristics. The hysteresis phenomenon is often attributed to water-mediated charge transfer between the CNT and the dielectric layer or the CNT and the water layer itself. In this study, we implement three different experimental techniques and provide evidence that the hysteresis phenomenon of suspended CNT FETs, as well as of on-surface CNT FETs which operate at low gate voltage regimes (| Vg | < 3V), is based on gate-induced, water-assisted redistribution of mobile charge on the SiO2 surface, and it is not related to charge injection from the CNT itself. Two techniques are based on the current measurements through the CNT and the third utilizes electrostatic force microscopy (EFM) setup. In addition, the applied external gate voltage affect the relaxation time of the current. This change arises from the modification of the amount of water layers which adsorb onto the dielectric surface, which caused by dielectrophoresis attraction between the water molecules and the substrate. It is found that the relaxation time, and hence the surface conductivity, are very sensitive for the first few layers, and saturates above three monolayers of water molecules.