The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead‐germanium, zinc‐germanium, indium‐germanium, antimony‐silicon, gallium‐silicon and aluminum‐silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.

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Analysis of plasmonic properties of heavily doped semiconductors using full band structure calculations

The cell discharge reactions of NbSe3 and TiS3 cathodes in nonaqueous lithium cells have been shown to involve three lithiums per MX3 . Using reaction with normaln‐normalBuLi as a model for cell discharge we show that cell discharge involves topochemical reactions in which the basic strucutre of the MX3 is maintained. Both NbSe3 and TiS3 are chain structures containing X‒X bonds. The false(X2)2− groups are reducible as well as the M4+ ion, accounting for the stoichiometry. The cell reaction is reversible for NbSe3 , but only partially reversible for TiS3 . Irreversibility in TiS3 is suggested to be due to a change in coordination geometry of Ti4+ from trigonal prismatic to octahedral.

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