We present experimental results concerning optical transitions and carrier dynamics (capture and relaxation) in self assembled InAs/GaAs quantum dot structures grown by metalorganic vapor phase epitaxy. Photoluminescence (PL) measurements at high excitation level reveal optical transitions above the ground state emission. These transitions are found to originate from occupied hole states by solving the quantum dot eigenvalue problem. Time-resolved studies after non-resonant pulse excitation exhibit a relaxation ladder of the excited carriers from the GaAs barrier down to the ground state of the quantum dots. From both the continuous-wave measurements and the PL-decay curves we conclude that the carrier relaxation at non-resonant excitation is mediated by Coulomb interaction (Auger effect). PL-decay curves after resonant pulse excitation reveal a longer rise time compared to non-resonant excitation which is a clear indication of a relaxation bottleneck inside the quantum dots. We interpret the rise time (≊ 400 ps) in this case to originate from relaxation via scattering by acoustic phonons. The PL-decay time of the ground state emission ≊700 ps is interpreted as the excitonic lifetime of the quantum dot.

We establish rate equations to describe Auger carrier capture kinetics in quantum dot structures, calculate Auger capture coefficients for self-assembled quantum dots, and analyze Auger capture kinetics using these equations. We show that Auger capture times can be of the order of 1–100 ps depending on barrier carrier and dot densities. Auger capture rates depend strongly on dot diameters and are greatest at dot diameters of about 10–20 nm.

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Promising cold physical plasma sources have been developed in the field of plasma medicine. An important prerequisite to their clinical use is lack of genotoxic effects in cells. During optimization of one or even different plasma sources for a specific application, large numbers of samples need to be analyzed. There are soft and easy-to-assess markers for genotoxic stress such as phosphorylation of histone H2AX (γH2AX) but only few tests are accredited by the OECD with regard to mutagenicity detection. The micronucleus (MN) assay is among them but often requires manual counting of many thousands of cells per sample under the microscope. A high-throughput MN assay is presented using image flow cytometry and image analysis software. A human lymphocyte cell line was treated with plasma generated with ten different feed gas conditions corresponding to distinct reactive species patterns that were investigated for their genotoxic potential. Several millions of cells were automatically analyzed by a MN quantification strategy outlined in detail in this work. Our data demonstrates the absence of newly formed MN in any feed gas condition using the atmospheric pressure plasma jet kINPen. As positive control, ionizing radiation gave a significant 5-fold increase in micronucleus frequency. Thus, this assay is suitable to assess the genotoxic potential in large sample sets of cells exposed chemical or physical agents including plasmas in an efficient, reliable, and semiautomated manner. Environ. Mol. Mutagen. 59:268-277, 2018. © 2018 Wiley Periodicals, Inc.

Carrier relaxation in self-assembled quantum dots due to Coulomb interaction with two dimensional ͑2D͒ carriers is studied theoretically. Auger coefficients for carrier relaxation rates are calculated in the dipole approximation for Coulomb interaction. The dipole approximation allows one to derive selection rules for Auger relaxation in a cylindrical quantum dot, and to describe a general picture of Auger relaxation via energy levels in self-assembled quantum dots. A numerical example for InAs/GaAs self-assembled quantum dots demonstrates that the Auger effect may lead to relaxation times in the order of 1-10 ps at 2D carrier densities of 10 11 -10 12 cm Ϫ2 . This result demonstrates the possibility of fast carrier relaxation in quantum dots if the carrier density in the surrounding barrier is sufficiently high. Analytical formulas for Auger coefficients are derived for moderate temperatures of the 2D carriers.