The performances of strained channel Si/Si 0.6 Ge 0.4 n-MODFETs as a function of gatelength have been investigated experimentally at 300K . The direct-current, microwave and noise performances of devices with gatelengths ranging from 0.5 µm to 0.1 µm are presented. Maximum oscillation frequency f MAX of 158 GHz is obtained for a 0.1 X 100 µm with f T = 42 GHz and a minimum noise figure NF min = 0.5 dB at 2.5 GHz showing the potential of SiGe technology. The dependence of small signal, and noise parameters on gatelength and biases has been analyzed to assess the impact of non stationary transport and of short channel effects on the device behavior.