Understanding the doping mechanisms in the simplest superconducting copper oxide-the infinite-layer compound ACuO2 (where A is an alkaline earth metal)-is an excellent way of investigating the pairing mechanism in high-transition-temperature (high-Tc) superconductors more generally. Gate-induced modulation of the carrier concentration to obtain superconductivity is a powerful means of achieving such understanding: it minimizes the effects of potential scattering by impurities, and of structural modifications arising from chemical dopants. Here we report the transport properties of thin films of the infinite-layer compound CaCuO2 using field-effect doping. At high hole- and electron-doping levels, superconductivity is induced in the nominally insulating material. Maximum values of Tc of 89 K and 34 K are observed respectively for hole- and electron-type doping of around 0.15 charge carriers per CuO2. We can explore the whole doping diagram of the CuO2 plane while changing only a single electric parameter, the gate voltage.

We report on the modulation of the transport properties of thin films, grown by molecular beam epitaxy, of the spin-ladder compound [CaCu2O3]4, using the field effect in a gated structure. At high hole-doping levels, superconductivity is induced in the nominally insulating ladder material without the use of high-pressure or chemical substitution. The observation of superconductivity is in agreement with the theoretical prediction that holes doped into spin ladders could pair and possibly superconduct.

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