A resistive switching device based on the stacked α-Fe2O3/Nb–SrTiO3 is proposed and fabricated that demonstrates excellent bipolar resistive switching behaviors including the uniformity, endurance, and retention performance. The Schottky-like current-voltage characteristics correlated with set process were observed in both high resistive states (HRSs) and low resistive states (LRSs) of the device. Importantly, the anticrosstalk characteristic, possessing higher reversed-biased LRS resistance than the forwarded-biased HRS resistance, indicates the potential applications of the stacked α-Fe2O3/Nb–SrTiO3 for multilevel storage in the cross-bar memory arrays. The carrier injection and trapping mechanism is suggested to explain the observed phenomena.

Articles you may be interested inThe effect of silicon doping in the barrier on the electroluminescence of InGaN/GaN multiple quantum well light emitting diodes Carrier recombination mechanisms in nitride single quantum well light-emitting diodes revealed by photo-and electroluminescence J. Appl. Phys.Light emitting diodes ͑LEDs͒ using InGaN/GaN quantum wells ͑QWs͒ with thin low temperature GaN ͑LT-GaN͒ layers bounding each InGaN layer are grown by metal-organic vapor phase epitaxy. The light output power of such LEDs increases by a factor of 2 at a drive current density of 35 A / cm 2 compared to that from reference LEDs without the LT-GaN. The blueshift in the emission wavelength is 5.2 nm when the current density increases from 3 to 50 A / cm 2 , which is much smaller than the shift 8.1 nm from reference LEDs. Moreover, the efficiency droop at high current injection is also reduced by 28%, and current density at which peak efficiency is observed increases from 1 to 2 A / cm 2 . High resolution transmission electron microscopy of the QWs bounded with LT-GaN shows higher quality and less strain compared to the reference samples. The better performance of LEDs incorporating the LT-GaN layers is attributed to suppressed polarization from piezoelectric fields.