This paper present a new circuit designed to support high accuracy reference voltages over a nearly full range of the power supply. To achieve this, the circuit is designed to be efficient utilizing a CMOS floating gate memory fabricated in 1.2 gm CMOS process. The memory stores voltages as charge on the floating gate of a pMOS transistor. The output voltages of the circuit are easily programming by simply modifying the value of the floating gate through the tunnelling and injection hot electrons mechanisms. Also, the circuit can drive a resistive load with the advantage of reduced both silicon area and dissipated power on chip.
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