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This paper presents two advanced 60Vpower MOSFET technologies for automotive applications. The first is a submicron channel DMOS technology which yields a specific onresistance of 1.7 milliohm x cm2, about half the value obtained by present production DMOS devices.The second is a trench DMOS technology developed to yield 1.1 milliohm x cm2 of specific on-resistance. Devices fabricated from both technologies exhibit superior rugged device performances in Undamped Inductive Switching (UIS). Design and process considerations will be discussed.

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The effect of processing conditions on the interface state density was evaluated from C-V measurements on metal-oxide-semiconductor capacitors. The optimum processing condition for the minimum surface state density was found to be related to the postoxidation annealing temperature and time, and was independent of chemical treatments prior to oxidation. Annealing at the optimum condition (i.e., at 350 °C for 1 h in either nitrogen or hydrogen gas, with or without an aluminum pattern on the oxide) reduces the fast surface state density by about one order of magnitude. By using a nitrogen/oxygen plasma, the static dielectric constant of the oxide decreased as the N/O ratio was increased, and nitrogen was incorporated into the oxide. In addition, the fast surface state density was reduced as a result of this nitridation process.

Physical properties of plasmagrown GaAs oxidesA new resonant ellipsometric technique for characterizing the interface between GaAs and its plasmagrown oxide ~las~a-grown G~s oxides an~ their interfaces have been characterized by measuring the electncal propertIes of metal-oxIde-semiconductor capacitors and of Schottky junctions. The current transport mechanism in the oxide at high electrical field was found to be Frankel-Poole emission, with an electron trap center at 0.47 eV below the conduction band of the oxide. The interface-state density, evaluated from capacitance and conductance measurements, exhibits a U-s~a~ interface-stat~ continuum extending over the entire band gap. Two discrete deep states WIth hIgh concentratIOn are superimposed on this continuum at 0.40 and 0.70 eV below the conduction band. The results obtained from measurements on Schottky junctions have excluded the possibility that these two deep states originate from plasma damage. Possible origins of these states are discussed in this paper.