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High electric fields near the drain of short‐channel n‐MOSFETs lead to the injection of hot electrons from the channel into silicon dioxide. The presented model describes the influence of trapped electrons on the transfer characteristic of short‐channel MOSFETs using a 2D‐device simulation for calculation the injection current of hot electrons and taking into account the first‐order trapping kinetics. It is shown that lateral (along the channel) inhomogeneous electron trapping in the oxide changes the threshold voltage, the subthreshold slope and reduces the transconductance.

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