In this work, the influence of magnetic field on I-V characteristics of bifacial silicon solar cell n+-p-p+ structure is studied under constant multispectral illumination. After resolution of continuity equation related to photogenerated minority carriers’ density in the base region of this cell, MATLAB numerical simulations of excess minority carriers’, photocurrent densities and junction photovoltage profiles, have been developed with magnetic field in the bulk of the base region. In the same way, the IV characteristics have been studied with magnetic field. It has been demonstrated that the I–V characteristics decreased. It also has shown how the I–V characteristics changed.

This paper presents two methods of recombination parameters determination by using internal quantum efficiency (IQE) data. The first method is a linear fit of the internal quantum efficiency reverse curves versus light penetration depth. The second one is a programming method. From each method, we determined the diffusion length and calculated the excess minority carriers' lifetime and recombination velocities. The results of the two methods have been compared. It comes that, the programming method gives an excellent result when the solar cell was illuminated at the back side..