In the Chinese Han population, PELI1 SNPs may be associated with SLE susceptibility.

As the electrons passing through the lens systems in a TEM, the unavoidable lens aberrations blur the image and distorted the phase of the image wave such that the recorded images do not actually reflect the true structure. Although, the lens aberrations do not affect the intensity of diffraction beam, the phase information in the diffraction plane lost during the recording procedure. The phase in reciprocal space relates to the relative position of atoms in the sample. That is, by solving the phase problem in the reciprocal space, the aberration-free imaging can be recovered.In 1972, Gerchberg and Saxton [1] proposed that by iterative algorithm method one is able to retrieve the phase in real and reciprocal space, basing on the measurements of intensities of the image and the diffraction patterns. As the time going Fienup in 1982 adds the feedback [2], who supported some constraint in real and reciprocal space to G-S method. This process is shown simply in Figure 1. Only the intensity of diffraction patterns and the shape of the object are needed. And one should notice that before the iteration the sampling in reciprocal space needed to be checked if all the information of intensity was not got lost [3]. During the iteration a renew phase is gained under the fixed intensities in reciprocal space and the constraint in real space.The MgO was selected for demonstration because it's light element compositions and well known structure. We simulate the diffraction intensities of an MgO nano-particle which contains 27 unit cells in JEOL 2000FX TEM at 200KV. Aberration-free image can be retrieved by using the proposed oversampling algorithm from the simulated diffraction intensity. Figure 2(a)-(c) show the simulated diffraction intensity of MgO in [100], [210], and [110] crystallographic orientations. Figure 2(d)-(f) show the results of well-recovered images corresponding to Figures 2 (a)-(c).After the aberration-free images are retrieved from several diffraction patterns of different crystallographic orientations, three-dimensional structural tomography can be further reconstructed by "Back Projection" algorithm. Electron tomography that gives 3-dimensional microstructure of object has been well developed and widely applied in the biology. Like the oversampling method applied in electron diffraction, the applications of electron tomography in materials science are also in the early stage. The Radon transformation [4] describes the projection through an object by integration with the thickness along the beam direction. Figure 3 shows the three-dimensional structure for the MgO, which is free from aberration.To be brief, in simulation case we have demonstrated the three-dimensional aberration-free images can be recovered from diffraction patterns of different crystallographic orientations.

Understanding the dopant diffusion in a device is one of the major challenges in advance ULSI semiconductor technology of nowadays. Recently, applications of electron holography in transmission electron microscopy to map 2D dopant distribution in the phase image have shown considerable promise [1]. However, the preparation of samples for analysis is a crucial aspect of the application of electron holography to semiconductor materials.The non-interferometric method, involving the so-called Transport of Intensity Equation (TIE) [2], have potentially a practical method for quantifying 2D p-n junctions as used in electron holography. The phase retrieval procedure with TIE has been successfully applied in different fields [3][4][5]. Here, we propose that TIE can be solved with a two-step de-convolution process using the maximum entropy method (MEM) is a sensitive phase trivial method that potentially provides comparable results as those obtained using electron holography.The p-n junctions for this investigation were made on a p-type Si wafer by implanting arsenic ions at 2 KeV to a dose of 9x10 14 cm -2 , then annealing at 1075 °C. Thin cross section of the device suitable for TEM observation was prepared by regular procedure and experimental images were obtained using a JEOL 2010F FEGTEM at 200kV. Figure 1(a)-(e) shows a series of cross-sectional TEM images of an n-MOS (As doped) transistor. The images were separated by a step size of 1510.4 nm. The Figure 2 presents the structure of n-MOS which demonstrated in the paper. The compositions and expected doping regions also indicated in the schematic. Figure 3 (a)-(b) show the reconstructed phase image by TIE/MEM method. The main characteristics of the n-MOS device were reconstructed as shown in phase image. The source and drain areas of the device are clearly visible by the increase in contrast. Because of the phase shift of the electron wave is proportional to inner potential of the material which electron wave passes through. Therefore, the whiter contrast suggests that the potential is higher than the dark regions. It's reasonable that the potential in the doped n-type (As doped) region is higher than the p-type (B doped) silicon substrate.The maximum entropy de-convolution method (MEM) is employed to solve the transport of intensity equation (TIE) for phase retrieval problems. The results establish that TIE/MEM can become an efficient and potentially a practical method for quantifying 2D p-n junctions as used in electron holography.

For the magnetic materials, the magnetic property is proportional to the angular momentum. In Electron Energy Loss Spectroscopy (EELS), the L ionization edges of transition metal usually display sharp peaks at the near edge region, known as "white line". The intensities of the white lines, normalized to the trailing background, reflect the filling of the d states [1]. By signal processed electron spectroscopic imaging (ESI) series energy loss image [2], it is feasible to quantitative analysis of two-dimension d states ratio (d 2/3 /d 2/5 ).A set of signal processing methods comprising fast Fourier transformation interpolation and maximum entropy deconvolution has been successfully integrated to improve the equality of the extracted Fe L-edge spectra from ESI series. Fast Fourier transformation interpolation is used to improve the dispersion arising from discrete sampling of ESI series in the energy space. The maximum entropy method is used to dispel the convolution effect resulting from the ESI series acquired with a finite energy window. Figure1(a) is the TEM image of Fe/α-Fe 2 O 3 and Figure 1(b) is the diffraction pattern of α-Fe 2 O 3 along the zone axis [10-10]. Theα-Fe 2 O 3 was determined in upper layer according the diffraction pattern as shown in the Figure (b). The proposed signal processing methods are applied to extract the d state ratio from the ESI images in theα-Fe 2 O 3 . Figure2 is the flow chart of signal processing procedures for reconstructing ESI spectra. The ESI images are acquired from 680eV to 780eV, the energy slit is 4eV and the step is 2eV, shown as Figure3 (a). Figure 3(b) and 3(c) are the spectrums extracted fromα-Fe 2 O 3 and Fe respectively. The L3 and L2 peaks are visible in the spectrum.The advanced results will present in the conference.

Plasmons [1] in RuO 2 nanowires were investigated by electron energy loss spectroscopy attached to high-resolution transmission electron microscopy. It has been found that the plasmon energy increases in proportion to the inverse of the nanowire width. So far the optical techniques such as the photoluminescence spectra measurement or Raman spectroscopy have been used in the investigation. However these techniques do not have enough sensitivity to explore the properties of an individual nano-scale particles, and thus the obtained spectra were always convoluted with the size distribution of the particles.Electron energy loss spectroscopy (EELS) attached to field-emission gun transmission electron microscopy (FEG-TEM) have been used to overcome this problem. Since the electron probe can be converged to the nanowire width using the condenser lens system of FEG-TEM, we can get the information from an individual nanowire with this technique. RuO 2 nanowires were prepared by a high vacuum furnace with VLS mechanism, and then characterized by a EDX attached on JEOL 2010F FEG-TEM. TEM images and SAD patterns ( Fig.1(b)) were recorded to check the nanostructure and preferential growth direction of the individual RuO 2 nanowires. Fig. 1(c) is the high-resolution image of the nanowire in (b). Fig.2 is the plasmon spectra of different size nanowires and Fig.3 shows the palsmon shift with the nanowire size from 13 to 83 nm. And the palsmon peaks shift from 3 to 8.5eV. For the nanowires, the peak shifts toward higher energy shows the increase of the volume plasmon energy is proportional to the inverse square of the nanowire size. For the insulator or semiconductor [2], the increase of the plasmon energy P