Abstract— The manufacture of large‐area arrays of thin‐film transistors on polymer substrates using roll‐to‐roll (R2R) processes exclusively is being developed. Self‐aligned imprint lithography (SAIL) enables the patterning and alignment of submicron‐sized features on meter‐scaled flexible substrates in the R2R environment. SAIL solves the problem of precision interlayer registry on a moving web by encoding all the geometry information required for the entire patterning steps into a monolithic three‐dimensional imprint with discrete thickness modulation. The pre‐aligned multiple‐step mask structure maintains its alignment regardless of subsequent substrate distortion. Challenges are encountered in relation to the novel nature of using flexible substrates and building toolsets for the R2R processing. In this paper, methods of the SAIL process, the resulting active‐matrix backplanes, the trajectory of SAIL process development, and the remaining issues for production are presented.

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A model for the H distribution and bonding structure in a-Si : H is presented based on new NMR and ir absorption data. The model is capable of explaining previous discrepancies in the interpretation of the ir absorption data without including oscillator strengths which vary with H density. Three types of H distributions are considered. First, the typical Si-H2 form which has a stretching mode at 2100 cm-1 and a bending mode at 890 cm-1 is included. Additionally, two distributions of Si-H bonds are included ; a dilute, random distribution which has an ir stretching mode at 2000 cm-1 and a clustered form which has its ir stretching mode near 2090 cm-l. Local H densities and sample wide average H densities for these two forms of Si-H bonds are determined from the NMR spectrum. This NMR data is correlated with the ir absorption data to calculate a fixed oscillator strength for each of the three types of H distribution

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