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Porous poly-silicon (PPS) samples, obtained by electrochemical anodization of p-type poly-silicon wafers, were doped with Pd by the electroless process. Rutherford backscattering spectroscopy shows that Pd has diffused a few micrometres into the PPS layer. Scanning electron microscopy and energy dispersive x-ray analysis results demonstrate the presence of Pd as dispersed clusters on the surface. The variation of the electrical resistance in the presence of dry air diluted with hydrogen at room temperature shows that Pd/PPS samples have the ability to sense hydrogen at levels down to several thousands of ppm. This value is far below the flammability limit of hydrogen gas. It was found that the increase in the time of anodization causes an increase in the penetration depth of Pd and, consequently, an increase in the sensitivity to hydrogen. By raising the device temperature to 60°C, the sensor response falls.

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