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A new concept for silicon microsensors based on porous EIS lectrolyte-nsulator4emiconductor) structures is presented. The porous sensor was prepared by anoclic etching of n-doped silicon and subsequent deposition of a dielectric layer of Si02. Experimental conditions were investigated to realize a well-defined macroporous formation of the porous silicon. To compare the chemical sensor properties with similar built-up pianar Si/Si02 structures, C/V (capacitanceoltage) measurements have been performed. The porous EIS structures have been characterized by SEM (Scanning Electron Microscopy), XPS (X-ray Photoelectron Spectroscopy) and cyclic voltammetiy. This solid-state technology allows the preparation oftransducer materials for pH microsensors.