No abstract

No abstract

Saturation of intraband absorption and electron relaxation time in n-doped InAs/GaAs self-assembled quantum dots Appl. Phys. Lett. 73, 3818 (1998); 10.1063/1.122904 Infrared spectroscopy of intraband transitions in self-organized InAs/GaAs quantum dots

By combining band gap engineering with the self-organized growth of quantum dots, we present a scheme of adjusting the mid-infrared absorption properties to desired energy transitions in quantum dot based photodetectors. Embedding the self organized InAs quantum dots into an AlAs/GaAs superlattice enables us to tune the optical transition energy by changing the superlattice period as well as by changing the growth conditions of the dots. Using a one band envelope function framework we are able, in a fully three dimensional calculation, to predict the photocurrent spectra of these devices as well as their polarization properties. The calculations further predict a strong impact of the dots on the superlattices minibands. The impact of vertical dot alignment or misalignment on the absorption properties of this dot/superlattice structure is investigated. The observed photocurrent spectra of vertically coupled quantum dot stacks show very good agreement with the calculations.In these experiments, vertically coupled quantum dot stacks show the best performance in the desired photodetector application.

We present an advanced method to tailor the optical and electrical properties of semiconductor quantum dot structures. By embedding vertically stacked quantum dots in a two-dimensional superlattice, the advantages of self-organized growth and of band structure engineering can be combined. The transition energies between the dot levels and the extended states of the superlattice can be adjusted by the period of the superlattice. We apply this scheme for photodetectors made of InAs quantum dots embedded in an AlAs/GaAs superlattice. The dark current of these devices is reduced by more than one order of magnitude compared to the devices without a superlattice.