This perspective illustrates the recent conceptual advancements in the growth of layered vdW TMDCs using either multi-source precursors or single-source precursors and provides a critical evaluation of these two approaches.
Two-dimensional tin monoselenide (SnSe) and tin diselenide
(SnSe2) materials were efficiently produced by the thermolysis
of
molecular compounds based on a new class of seleno-ligands. Main group
metal chalcogenides are of fundamental interest due to their layered
structures, thickness-dependent modulation in electronic structure,
and small effective mass, which make them attractive candidates for
optoelectronic applications. We demonstrate here the synthesis of
stable tin selenide precursors by in situ reductive
bond cleavage in the dimeric diselenide ligand (SeC2H4N(Me)C2H4Se)2 in the presence
of SnCl4. New molecular precursors [SnIV(SeC2H4N(Me)C2H4Se)2], [SnIVCl2(SeC2H4N(Me)C2H4Se)], and [SnIV(SC2H4N(Me)C2H4S)(SeC2H4N(Me)C2H4Se)] were thoroughly characterized
by multinuclear magnetic resonance studies and single-crystal X-ray
diffraction analysis that revealed the Sn(IV) center to be octahedrally
coordinated by two tridentate dianionic chelating ligands or trigonally
pyramidally coordinated by one chelating ligand and two chlorido ligands.
Preorganization of metal–selenium bonds in both compounds offered
direct and reproducible synthetic access to two-dimensional tin chalcogenides
(SnSe and SnSe2) via simple adjustment of the pyrolysis
temperature. Additionally, SnSe2 and SnS
x
Se2–x
particles could be
successfully synthesized by microwave-assisted decomposition of the
molecular precursors, which was unambiguously corroborated by both
experimental and computational analyses that explained the formation
of a selenium rich SnS
x
Se2–x
phase from a single molecular precursor containing
both Sn–Se and Sn–S bonds.
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