The mechanical behavior of crystals is dominated by dislocation networks, their structure and their interactions with impurities or thermal phonons. However, in classical crystals, networks are usually random with impurities often forming non-equilibrium clusters when their motion freezes at low temperature. Helium provides unique advantages for the study of dislocations: crystals are free of all but isotopic impurities, the concentration of these can be reduced to the ppb level, and the impurities are mobile at all temperatures and therefore remain in equilibrium with the dislocations. We have achieved a comprehensive study of the mechanical response of 4 He crystals to a driving strain as a function of temperature, frequency and strain amplitude. The quality of our fits to the complete set of data strongly supports our assumption of string-like vibrating dislocations. It leads to a precise determination of the distribution of dislocation network lengths and to detailed information about the interaction between dislocations and both thermal phonons and 3 He impurities. The width of the dissipation peak associated with impurity binding is larger than predicted by a simple Debye model, and much of this broadening is due to the distribution of network lengths.

Reducing the moment of inertia improves the sensitivity of a mechanically based torque sensor, the parallel of reducing the mass of a force sensor, yet the correspondingly small displacements can be difficult to measure. To resolve this, we incorporate cavity optomechanics, which involves co-localizing an optical and mechanical resonance. With the resulting enhanced readout, cavity-optomechanical torque sensors are now limited only by thermal noise. Further progress requires thermalizing such sensors to low temperatures, where sensitivity limitations are instead imposed by quantum noise. Here, by cooling a cavity-optomechanical torque sensor to 25 mK, we demonstrate a torque sensitivity of 2.9 yNm/. At just over a factor of ten above its quantum-limited sensitivity, such cryogenic optomechanical torque sensors will enable both static and dynamic measurements of integrated samples at the level of a few hundred spins.

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Nanomechanical resonators have demonstrated great potential for use as versatile tools in a number of emerging quantum technologies. For such applications, the performance of these systems is restricted by the decoherence of their fragile quantum states, necessitating a thorough understanding of their dissipative coupling to the surrounding environment. In bulk amorphous solids, these dissipation channels are dominated at low temperatures by parasitic coupling to intrinsic two-level system (TLS) defects, however, there remains a disconnect between theory and experiment on how this damping manifests in dimensionally-reduced nanomechanical resonators. Here, we present an optomechanically-mediated thermal ringdown technique, which we use to perform simultaneous measurements of the dissipation in four mechanical modes of a cryogenically-cooled silicon nanoresonator, with resonant frequencies ranging from 3 -19 MHz. Analyzing the device's mechanical damping rate at fridge temperatures between 10 mK -10 K, we demonstrate quantitative agreement with the standard tunneling model for TLS ensembles confined to one dimension. From these fits, we extract the defect density of states (P 0 ∼ 1 -4 × 10 44 J −1 m −3 ) and deformation potentials (γ ∼ 1 -2 eV), showing that each mechanical mode couples on average to less than a single thermally-active defect at 10 mK.

Our experiments show that in $^4$He crystals, the binding of $^3$He impurities to dislocations does not necessarily imply their pinning. Indeed, in these crystals, there are two different regimes of the motion of dislocations when impurities bind to them. At lowdriving strain $\epsilon$ and frequency $\omega$, where the dislocation speed is less than a critical value (45 $\mu$m/s), dislocations and impurities apparently move together. Impurities really pin the dislocations only at higher values of $\omega$. The critical speed separating the two regimes is two orders of magnitude smaller than the average speed of free $^3$He impurities in the bulk crystal lattice.We obtained this result by studying the dissipation of dislocation motion as a function of the frequency and amplitude of a driving strain applied to a crystal at low temperature. Our results solve an apparent contradiction between some experiments, which showed a frequency-dependent transition temperature from a soft to a stiff state, and other experiments or models where this temperature was assumed to be independent of frequency. The impurity pinning mechanism for dislocations appears to be more complicated than previously assumed