This paper aims to present the design and the achieved results on a CMOS electronic and photonic integrated device for low cost, low power, transparent, mass-manufacturable optical switching. An unprecedented number of integrated photonic components (more than 1000), each individually electronically controlled, allows for the realization of a transponder aggregator device which interconnects up to eight transponders to a four direction colorless-directionless-contentionless ROADM. Each direction supports 12 200-GHz spaced wavelengths, which can be independently added or dropped from the network. An electronic ASIC, 3-D integrated on top of the photonic chip, controls the switch fabrics to allow a complete and microsecond fast reconfigurability
We present the design procedure and experimental results of thermally tunable double ring resonators for integrated wavelength division multiplexing applications. A detailed analytical model specific for double rings is described, and a modified racetrack geometry using Bezier bends is used to reduce bending loss. We demonstrate devices with a free-spectral-range up to 2.4 THz (19 nm) around 1550 nm and nonadjacent channel rejection higher than 35 dB. The experimental results of thermally tunable double ring resonators is also presented with doped silicon integrated heaters, allowing the device to be used as a tunable filter or a switch
Ring resonators are one of the fundamental building blocks of advanced integrated optical circuits. They find applications as nonlinear optical elements, filters, sensors, and switches among others. Here, a comprehensive optimization framework and experimental results of thermally tunable microring resonators in silicon photonics is presented, with a focus on standard silicon photonic foundry processes. In order to minimize the total power consumption, the ring resonators are tuned by applying a pulse‐width‐modulated electrical signal to the heaters. The thermal performance of integrated silicon and metal heaters are investigated and compared using an effective model validated by the measurement results. The heater power consumption is minimized by optimizing heater cross section, resistance, and metal contact configurations. Using the multiproject wafer run developed at CEA‐LETI, it is demonstrated that a metal heater provides 30% lower power consumption compared to an integrated silicon one, reaching a power consumption of 27.53 mW per free spectral range. The measurements are in excellent agreement with the theoretically predicted thermal performance, with a deviation as low as 5%. The proposed framework, supported by the experimental results, will serve as a design guideline set that can be easily adapted for other thermo‐optic switches in future silicon photonic applications.
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