The demand for high-temperature dielectric materials arises from numerous emerging applications such as electric vehicles, wind generators, solar converters, aerospace power conditioning, and downhole oil and gas explorations, in which the power systems and electronic devices have to operate at elevated temperatures. This article presents an overview of recent progress in the field of nanostructured dielectric materials targeted for high-temperature capacitive energy storage applications. Polymers, polymer nanocomposites, and bulk ceramics and thin films are the focus of the materials reviewed. Both commercial products and the latest research results are covered. While general design considerations are briefly discussed, emphasis is placed on material specifications oriented toward the intended high-temperature applications, such as dielectric properties, temperature stability, energy density, and charge-discharge efficiency. The advantages and shortcomings of the existing dielectric materials are identified. Challenges along with future research opportunities are highlighted at the end of this review.

The carrier concentration of the electron-selective layer (ESL) and hole-selective layer can significantly affect the performance of organic-inorganic lead halide perovskite solar cells (PSCs). Herein, a facile yet effective two-step method, i.e., room-temperature colloidal synthesis and low-temperature removal of additive (thiourea), to control the carrier concentration of SnO quantum dot (QD) ESLs to achieve high-performance PSCs is developed. By optimizing the electron density of SnO QD ESLs, a champion stabilized power output of 20.32% for the planar PSCs using triple cation perovskite absorber and 19.73% for those using CH NH PbI absorber is achieved. The superior uniformity of low-temperature processed SnO QD ESLs also enables the fabrication of ≈19% efficiency PSCs with an aperture area of 1.0 cm and 16.97% efficiency flexible device. The results demonstrate the promise of carrier-concentration-controlled SnO QD ESLs for fabricating stable, efficient, reproducible, large-scale, and flexible planar PSCs.

Large single crystals serve as an ideal platform for investigating intrinsic material properties and optoelectronic applications. Here we develop a method, namely, room-temperature liquid diffused separation induced crystallization that uses silicone oil to separate the solvent from the perovskite precursors, to grow high-quality perovskite single crystals. The growth kinetics of perovskite single crystals using this method is elucidated, and their structural and optoelectronic properties are carefully characterized. The resultant perovskite single crystals, taking CH3NH3PbBr3 as an example, exhibit approximately 1 µs lifetime, a low trap density of 4.4 × 109 cm−3, and high yield of 92%, which are appealing for visible light or X-ray detection. We hope our findings will be of great significance for the continued advancement of high-quality perovskite single crystals, through a better understanding of growth mechanisms and their deployment in various optoelectronics. The diffused separation induced crystallization strategy presents a major step forward for advancing the field on perovskite single crystals.

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