This paper has presented the characteristic features of the reflectivity of the output mirror at 415 nm vertical cavity surface emitting lasers with various distributed Bragg reflectors pairs. For this, vertical cavity surface emitting lasers with various corresponding p-distributed Bragg reflectors pairs are simulated using integrated system engineering simulation program. The output power and the threshold current for each of these devices were determined. We found that by increasing distributed Bragg reflectors pairs, the distributed Bragg reflectors reflectivity increased, which can reduce the device lasing threshold. However, the external differential quantum efficiency was inversely related to top mirror reflectivity. So, the optical output of the device also decreased with increased p-type mirror pairs. A suitable distributed Bragg reflectors design is carefully selected for the pair number so as to balance among low lasing threshold current, high output power, and high efficiency.
This study is an attempt to investigate the effect of grading layers thicknesses and doping on the distributed Bragg reflectors (DBRs) resistivity by using advanced numerical simulation (ISETCAD). Various VCSEL with and without grading DBRs aredesigned. It was observed increasing the length of grading minimize the voltage drop on the device, especially for p DBR. And total resistance of the device can be further lowered if all grading layers are all highly doped.
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