In this work we report on the elaboration and characterization of Ge1−xSnx nanowires synthetized by chemical vapor deposition (CVD) via vapor–liquid–solid (VLS) mechanism using GeH4 and SnCl4 as precursors. We have investigated tin incorporation in Ge as a function of experimental growth conditions such as growth temperature and Sn precursor partial pressure (PSnCl4/PGeH4 ratio). We have demonstrated Ge1−xSnx nanowires with Sn incorporation around 1 at.% in the core with a thin Sn‐rich shell with up to 10 at.% Sn well beyond the equilibrium solubility of Sn in bulk Ge.

The lateral oxidation of thick AlGaAs layers (>500 nm) is studied. An uncommon shape of the oxide tip is evidenced and attributed to the embedded stress distribution, inherent to the oxidation reaction. Experimental and numerical studies of the internal strain in oxidized AlxGa1−xAs/GaAs structures were carried out by dark-field electron holography and finite element methods. A mapping of the strain distribution around the AlGaAs/oxide interface demonstrates the main role of internal stress on the shaping of the oxide front. These results demonstrate the high relevance of strain in oxide-confined III-V devices, in particular, with over-500-nm thick AlOx confinement layers.

Strain from oxidation-induced volume shrinkage is studied by micro-photoluminescence. An InGaAs/GaAs quantum well (QW) placed at the vicinity of the selectively oxidized AlAs layer is used to probe the spatial distribution of the strain with a resolution of 1 µm. A QW wavelength shift of 1 nm imputed to the embedded strain is observed in agreement with finite element calculations. With this method, an overstrained zone is highlighted where the counter-propagative oxidation fronts merge.