Complementary resistive switching (CRS) devices are more advantageous compared to bipolar resistive switching (BRS) devices for memory applications as they can minimize the sneak path problem observed in the case of BRS having a crossbar array structure. Here, we report the CRS behavior of 1,4bis(di(1H-indol-3-yl)methyl)benzene (Indole1) molecules. Our earlier study revealed that Au/Indole1/Indium tin oxide (ITO) devices showed BRS under ambient conditions. However, the present investigations revealed that when the device is exposed to 353 K or higher temperatures, dynamic evolution of the Au/ Indole1/ITO device from BRS to CRS occurred with a very good memory window (∼10 3 ), data retention (5.1 × 10 3 s), stability (50 days), and device yield (∼ 60%). This work explores the application possibility of indole derivatives toward future ultradense resistive random access memory.

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Development of biocompatible and biodegradable information storage could be one of the major strides toward the advancement of the next-generation eco-friendly electronics. Locally available leaves of Ipomoea carnea (IC) are employed to design a nonvolatile resistive memory device having the configuration Au/IC/ITO. The IC-based memory device is found to have back-to-back Schottky behavior. The memory device exhibits a very good ON/OFF ratio (∼102), device yield (78%), reproducibility (≈32 cycles), and good physical stability (>360 days). Upon UV irradiation, the device performance improves in terms of a higher device yield (82%) and a larger memory window (104). Space charge-limited conduction, Schottky emission (SE), and metallic filament formation were the key behind the conduction mechanism for such observed switching behavior. Atomic force microscopy measurements have also been carried out in order to visualize the conduction filament in the IC-based resistive device. Temperature-dependent investigations confirmed that the gold filament and oxygen vacancy filament play an important role in the conduction mechanism. Based on the I–V characteristics as well as the data storage nature, it has been proposed that IC-based switching devices may be utilized to design rewritable read-only memory devices. This is an improvement of conventional write-once-read-many memory.