We investigate the effects of high-rate and high total doses of 60Co gamma rays on the current–voltage (IV) characteristics of GaN p+n diodes grown by metal-organic chemical vapor phase epitaxy on Ga-face (0001) sapphire and hydride vapor phase epitaxy freestanding GaN substrates. We show that diodes grown on sapphire undergo more permanent changes upon irradiation at doses up to 3900 kGy than those grown on freestanding GaN. By combining diode and circular transfer length method measurements, we show that the p-type contact interface and adjacent p++ Mg-doped layer are sensitive to irradiation. In initial experiments, diodes grown on sapphire exhibited p-type contacts with Schottky characteristics, while those on freestanding GaN were Ohmic. Serendipitously, we identified and subsequently irradiated a freestanding sample with a pre-irradiation spatial gradient of p-contact Schottky vs Ohmic behavior across the die. This sample allowed the root cause of induced change to be identified as differences in the p++ contacting layer. We show that the p-type contact's pre-irradiation Schottky behavior is predictive of diodes' IV characteristics changing significantly upon gamma-ray irradiation. Further, we observe that the IV curves of diodes on freestanding GaN recover fully over several weeks at room temperature to be indistinguishable from pre-irradiation. IV curves from diodes on sapphire do not fully recover; we thus hypothesize that interactions between radiation-induced point defects and threading dislocations affect the evolution of radiation damage.

We investigate the impact of high-dose gamma-ray irradiation on the electrical performance of Ga-polar and N-polar GaN-based p–n diodes grown by metalorganic chemical vapor deposition. We compare the current density–voltage (J–V), capacitance–voltage (C–V), and circular transfer length method characteristics of the p–n diodes fabricated on Ga-polar and N-polar orientations before and after irradiation. The relative turn-on voltage increases for the Ga-polar diodes with an increasing irradiation dose, while it increases initially and then starts to decrease for the N-polar diodes. The p-contact total resistance increases for Ga-polar and decreases for N-polar samples, which we attribute to the formation of point defects and additional Mg activation after irradiation. The J–V characteristics of most of the tested diodes recovered over time, suggesting the changes in the J–V characteristics are temporary and potentially due to metastable occupancy of traps after irradiation. X-ray photoelectron spectroscopy and photoluminescence measurements reveal the existence of different types of initial defects and surface electronic states on Ga-polar and N-polar samples. Gallium vacancies (VGa) are dominant defects in Ga-polar samples, while nitrogen vacancies (VN) are dominant in N-polar samples. The presence of a higher concentration of surface states on Ga-polar surfaces than N-polar surfaces was confirmed by calculating the band bending and the corresponding screening effect due to opposite polarization bound charge and ionized acceptors at the surface. The difference in surface stoichiometry in these two orientations is responsible for the different behavior in electrical characteristics after gamma-ray interactions.

In this paper, we experimentally studied group polarimetric pressure sensitivity of a fabricated elliptical-core side-hole fiber (EC-SHF). We investigated the polarimetric behavior of this fiber under three steps of chosen pressure intervals of 100 to 104 lbf/in 2 , 1000 to 1004 lbf/in 2 , and 2000 to 2004 lbf/in 2 , respectively. We obtained high group polarimetric sensitivity from 2.6 × 10 −7 (3.7 × 10 −5 MPa −1 ) to 3 × 10 −7 (lbf/in 2 ) -1 (4.3 × 10 −5 MPa −1 ) under 100 to 104 lbf/in 2 pressure interval, which decreased under upper pressure intervals. We carried out a simulation to understand the reason for change of polarimetric sensitivity at telecommunication wavelengths (1550-nm region) and also the relationship between the group birefringence variation and increasing pressure. For this purpose, by using finite-element method, we demonstrate the effects of structural deformation and stress variation of EC-SHF cross section on spectral transformation of fundamental polarization modes. Our simulation and experimental results are in agreement with each other and indicate that under different pressure intervals, shorter wavelengths have more birefringence variation and pressure sensitivity than longer wavelengths. These results show that changing the group birefringence and pressure sensitivity in lower pressure are higher than the upper ones.Index Terms-Elliptical core side-hole fiber, finite element method, group polarimetric sensitivity, telecommunication wavelengths.

Studies of the radiation tolerance and electrical behavior of gallium nitride (GaN) based devices are important for the next generation of high-power and high-voltage electronics that may be subjected to harsh environments such as nuclear reactor and fusion facilities, particle accelerators, and post-denotation environments. In this work, we study the behavior of Ga-polar and N-polar GaN Schottky diodes before and after exposure to fast and thermal + fast neutrons. Temperature-dependent current–voltage ( I–V) and circular transmission line method (CTLM) measurements were used to study the electrical characteristics. A strong reduction in reverse leakage current and an increase in differential resistance in forward bias were observed after neutron irradiation. Thermionic emission (TE), Frenkel–Poole (FP) emission, and Fowler–Nordheim (FN) tunneling models were used to explain the forward and reverse I–V characteristics pre- and post-irradiation. The study confirms that Ga-polar and N-polar GaN Schottky diodes exhibit different electrical responses to fast and thermal neutron irradiations. The reverse bias characteristics of N-polar diodes are less affected after the fast neutron irradiation compared to Ga-polar diodes, while in the forward bias region, the electrical behavior after fast and thermal neutron irradiations is similar in Ga-polar and N-polar diodes. The results indicate that the role of orientation should be considered in the design of GaN-based radiation-tolerant electronics.

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