We present results from the application of a novel, contactless patterning technique to form the doped fingers required for interdigitated back contact silicon heterojunction (IBC-SHJ) solar cells. The technique involves patterning the RF powered electrode in a custom-designed RF-PECVD chamber. The patterned powered electrode -which has 1 mm wide openingslits in it -is brought in close proximity to the substrate surface, to localize the plasma and the process it performs. In this work, the localized plasma process being employed is an NF3/Ar etching, and is used to form doped fingers that are sub-mm wide and 60 mm long. The interdigitated structure (alternating electron and hole collection zones) is created by first uniformly depositing an intrinsic/n-type a-Si:H passivation stack, followed by an n-type/p-type µc-Si:H recombination junction on the rear side. A passivation layer is also deposited on the front side. The regions for the hole collection zones are then etched down to the intrinsic a-Si:H layer, and finally, a uniform p-type a-Si:H layer is deposited everywhere. The etched finger areas are first investigated by profilometry and spectroscopic ellipsometry, showing that the process can be controlled to leave as little as a few nanometers of passivating intrinsic a-Si:H. This fine control is achieved by pulsing the plasma, to slow the etching rate to a few Å/s. To evaluate the detailed opto-electronic properties of the structure, the samples are mapped out using two contactless techniques: Photoluminescence and Surface Photovoltage measurements (done with a macroscopic scanning Kelvin probe performed under dark and illuminated conditions). These measurements enable one to see both zones of degraded passivation, and the effectiveness of the doped regions in generating an open circuit voltage under illumination.