While structural colors are ubiquitous in nature, saturated reds are mysteriously absent. This long-standing problem of achieving Schrödinger’s red demands sharp transitions from “stopband” to a high-reflectance “passband” with total suppression of higher-order resonances at blue/green wavelengths. Current approaches based on nanoantennas are insufficient to satisfy all conditions simultaneously. Here, we designed Si nanoantennas to support two partially overlapping quasi–bound-states-in-the-continuum modes with a gradient descent algorithm to achieve sharp spectral edges at red wavelengths. Meanwhile, high-order modes at blue/green wavelengths are suppressed via engineering the substrate-induced diffraction channels and the absorption of amorphous Si. This design produces possibly the most saturated and brightest reds with ~80% reflectance, exceeding the red vertex in sRGB and even the cadmium red pigment. Its nature of being sensitive to polarization and illumination angle could be potentially used for information encryption, and this proposed paradigm could be generalized to other Schrödinger’s color pixels.

Although Si acts as an electrical semiconductor, it has properties of an optical dielectric.Here, we revisit the behavior of Si as a plasmonic metal. This behavior was previously shown to arise from strong interband transitions that lead to negative permittivity of Si across the ultra-violet spectral range. However, so far, few have studied the plasmonic characteristics of Si, particularly in its nanostructures. In this paper, we report localized plasmon resonances in Si nanostructures and the observation of plasmon hybridization in the UV (~250 nm wavelength). In addition, simulation results show that Si nanodisk dimers can achieve a local intensity enhancement greater than ~500-fold in a 1 nm gap. Lastly, we investigate hybrid Si-Al nanostructures to achieve sharp resonances in the UV, due to the coupling between plasmon resonances supported by Si and Al nanostructures. These results will have potential applications in the UV range, such as nanostructured devices for spectral filtering, plasmon enhanced Si photodetectors, interrogation of molecular chirality, and catalysis. It could have significant impact on UV photolithography on patterned Si structures.

Bound-states-in-the-continuum (BIC) is an emerging concept in nanophotonics with potential impact in applications, such as hyperspectral imaging, mirror-less lasing, and nonlinear harmonic generation. As true BIC modes are non-radiative, they cannot be excited by using propagating light to investigate their optical characteristics. In this paper, for the 1st time, we map out the strong near-field localization of the true BIC resonance on arrays of silicon nanoantennas, via electron energy loss spectroscopy with a sub-1-nm electron beam. By systematically breaking the designed antenna symmetry, emissive quasi-BIC resonances become visible. This gives a unique experimental tool to determine the coherent interaction length, which we show to require at least six neighboring antenna elements. More importantly, we demonstrate that quasi-BIC resonances are able to enhance localized light emission via the Purcell effect by at least 60 times, as compared to unpatterned silicon. This work is expected to enable practical applications of designed, ultra-compact BIC antennas such as for the controlled, localized excitation of quantum emitters.