Localized optical resonances in metallic nanostructures have been increasingly used in color printing, demonstrating unprecedented resolution but limited in color gamut. Here, we introduce a new nanostructure design, which broadens the gamut while retaining print resolution. Instead of metals, silicon nanostructures that exhibit localized magnetic and electric dipole resonances were fabricated on a silicon substrate coated with a SiN index matching layer. Index matching allows a suppression of substrate effects, thus enabling Kerker's conditions to be met, that is, sharpened transitions in the reflectance spectra leading to saturated colors. This nanostructure design achieves a color gamut superior to sRGB, and is compatible with CMOS processes. The presented design could enable compact high-resolution color displays and filters, and the use of a SiN antireflection coating can be readily extended to designs with nanostructures fabricated using other high-index materials.

Impressive properties arise from the atomically thin nature of transition metal dichalcogenide two-dimensional materials. However, being atomically thin limits their optical absorption or emission. Hence, enhancing their photoluminescence by plasmonic nanostructures is critical for integrating these materials in optoelectronic and photonic devices. Typical photoluminescence enhancement from transition metal dichalcogenides is 100-fold, with recent enhancement of 1,000-fold achieved by simultaneously enhancing absorption, emission and directionality of the system. By suspending WSe2 flakes onto sub-20-nm-wide trenches in gold substrate, we report a giant photoluminescence enhancement of ∼20,000-fold. It is attributed to an enhanced absorption of the pump laser due to the lateral gap plasmons confined in the trenches and the enhanced Purcell factor by the plasmonic nanostructure. This work demonstrates the feasibility of giant photoluminescence enhancement in WSe2 with judiciously designed plasmonic nanostructures and paves a way towards the implementation of plasmon-enhanced transition metal dichalcogenide photodetectors, sensors and emitters.

The dielectric metasurface hologram promises higher efficiencies due to lower absorption than its plasmonic counterpart. However, it has only been used, up to now, for controlling linear-polarization photons to form single-plane holographic images in the near-infrared region. Here, we report a transmissiontype metahologram achieving images in three colors, free from high-order diffraction and twin-image issues, with 8-level modulation of geometric phase by controlling photon spin via precisely patterned Si nanostructures with varying orientations. The resulting real and virtual holographic images with spin dependence of incident photons natively enable the spin degeneracy removal of light, leading to a metahologram-enabled spin Hall effect of light. Low-absorption dielectrics also enable us to create holograms for short-wavelength light down to 480 nm, thus spanning the three primary colors. It possesses the potential for compact color-display chips using mature semiconductor processes, and holds significant advantages over previous metaholograms operating at longer wavelengths.