Surface-response functions are one of the most promising routes for bridging the gap between fully quantum-mechanical calculations and phenomenological models in quantum nanoplasmonics. Among all currently available recipes for obtaining such response functions, the use of ab initio methods remains one of the most conspicuous trends, wherein the surface-response functions are retrieved via the metal’s non-equilibrium response to an external time-dependent perturbation. Here, we present a complementary approach to approximate one of the most appealing surface-response functions, namely the Feibelman d-parameters, yield a finite contribution even when they are calculated solely with the equilibrium properties of the metal, described under the local-response approximation (LRA) but with a spatially varying equilibrium electron density, as input. Using model calculations that mimic both spill-in and spill-out of the equilibrium electron density, we show that the obtained d-parameters are in qualitative agreement with more elaborate, but also more computationally demanding, ab initio methods. The analytical work presented here illustrates how microscopic surface-response functions can emerge out of entirely local electrodynamic considerations.

Enhancement of the surface photoemission from metal into semiconductor by resonance tunneling of photoexcited electrons through (quasi-) discrete level in quantum well, located within Schottky barrier of the metal-semiconductor interface, is studied theoretically taking into account the difference between the electron masses in metal and semiconductor. It is shown, in particular, that resonance tunneling through the discrete level can lead to the redshift of the threshold wavelength of surface photoeffect, higher slope linear growth in photocurrent near the threshold (in contrast to quadratic growth, i.e., Fowler's law), and the possibility to increase substantially the photoemission efficiency similarly to recent experimental results on hot carrier generation in plasmonic structures with a discrete energy level at metal interface. The difference in the effective masses is shown to significantly affect the results. Double-barrier tunneling structures with resonant tunneling may become attractive for applications in photochemistry and in plasmonic photodetectors in near IR and middle IR regions of the spectrum.

We analyze the emergence of unphysical superluminal group velocities in Su-Schrieffer-Heeger (SSH) paritytime (PT ) symmetric chains, and explore the origins of such a behavior. By comparing the band structure of an infinite loss-gain SSH chain with that of a continuous realization-a one-dimensional Bragg stack governed by the Helmholtz equation-we first exclude insufficient coupling consideration in the tight-binding description as the cause of group-velocity divergence. We then focus on material dispersion, and show that indeed, restoring causality in the description of both the lossy and the gain components resolves the problem and recovers finite group velocities, whose real part can only exceed the speed of light in vacuum when accompanied by a significant imaginary part. Our analysis introduces thus the required practical limits in the performance of common PTsymmetric systems.