High-quality black phosphorus (BP) saturable absorber mirror (SAM) was successfully fabricated with few-layered BP (phosphorene). By employing the prepared phosphorene SAM, we have demonstrated ultrafast pulse generation from a BP mode-locked bulk laser for the first time to our best knowledge. Pulses as short as 6.1 ps with an average power of 460 mW were obtained at the central wavelength of 1064.1 nm. Considering the direct and flexible band gap for different layers of phosphorene, this work may provide a possible method for fabricating BP SAM to achieve ultrafast solid-state lasers in IR and mid-IR wavelength region.

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A 3 mm × 5 mm crystal of MoS2is grown by the Sn flux method.

A compact saturable absorber mirror (SAM) based on few-layer molybdenum disulfide (MoS 2) nanoplatelets was fabricated and successfully used as an efficient saturable absorber (SA) for the passively Q-switched solid-state laser at 1 μm wavelength. Pulses as short as 182 ns were obtained from a ytterbium-doped (Yb:LGGG) bulk laser Q-switched by the MoS 2 SAM, which we believe to be the shortest one ever achieved from the MoS 2 SAs-based Q-switched bulk lasers. A maximum average output power of 0.6 W was obtained with a slope efficiency of 24%, corresponding to single pulse energy up to 1.8 μJ. In addition, the simultaneous dual-wavelength Q-switching at 1025.2 and 1028.1 nm has been successfully achieved. The results indicate the promising potential of few-layer MoS 2 nanoplatelets as nonlinear optical switches for achieving efficient pulsed bulk lasers.

Higher quality Nd:GMB crystals were obtained using enhanced K2Mo3O10–B2O3 flux. Intense multi-wavelength emissions reveal their potential in THz technology.