The optical properties for nano-structured semiconductor systems are of great importance nowadays, due to its possible implementation for the design of efficient optoelectronic devices. It is also well known that external fields can modify the electronic structure, and induce changes the optical properties as well. In particular the asymmetric double quantum well structures are of paramount importance because its wide range on possible configurations and also because are experimentally feasible and well controlled, particularly AlxGa1-xAs/GaAs heterostructures. In this work we report a systematic study on second harmonic generation (SHG) for an asymmetric AlxGa1-xAs/GaAs double quantum well as a function of non-resonant intense laser field and  in-plane magnetic field effect. We analyze the energy level behavior as well as the dipole matrix elements as a function of the above mentioned factors that are important for the SHG. We report a particular configuration that optimize the SHG peak, with and without intense laser field effect, as well as magnetic fields, that also tune the SHG.

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