Recent years have witnessed a rapidly growing interest in exploring the use of spin waves for information transmission and computation toward establishing a spin-wave-based technology that is not only significantly more energy efficient than the CMOS technology, but may also cause a major departure from the von-Neumann architecture by enabling memory-in-logic and logic-in-memory architectures. A major bottleneck of advancing this technology is the excitation of spin waves with short wavelengths, which is a must because the wavelength dictates device scalability. Here, we report the discovery of an approach for the excitation of nm-wavelength spin waves. The demonstration uses ferromagnetic nanowires grown on a 20-nm-thick Y3Fe5O12 film strip. The propagation of spin waves with a wavelength down to 50 nm over a distance of 60,000 nm is measured. The measurements yield a spin-wave group velocity as high as 2600 m s−1, which is faster than both domain wall and skyrmion motions.
Seven decades after the discovery of collective spin excitations in microwave-irradiated ferromagnets, there has been a rebirth of magnonics. However, magnetic nanodevices will enable smart GHz-to-THz devices at low power consumption only, if such spin waves (magnons) are generated and manipulated on the sub-100 nm scale. Here we show how magnons with a wavelength of a few 10 nm are exploited by combining the functionality of insulating yttrium iron garnet and nanodisks from different ferromagnets. We demonstrate magnonic devices at wavelengths of 88 nm written/read by conventional coplanar waveguides. Our microwave-to-magnon transducers are reconfigurable and thereby provide additional functionalities. The results pave the way for a multi-functional GHz technology with unprecedented miniaturization exploiting nanoscale wavelengths that are otherwise relevant for soft X-rays. Nanomagnonics integrated with broadband microwave circuitry offer applications that are wide ranging, from nanoscale microwave components to nonlinear data processing, image reconstruction and wave-based logic.
ABSTRACT. We demonstrate electrical control of the A-exciton interband transition in mono-and fewlayer MoS2 crystals embedded into photocapacitor devices via the DC Stark effect. Electric field dependent low-temperature photoluminescence spectroscopy reveals a significant tuneability of the
We demonstrate pronounced electric-field-induced second-harmonic generation in naturally inversion symmetric 2H stacked bilayer MoS embedded into microcapacitor devices. By applying strong external electric field perturbations (|F| = ±2.6 MV cm) perpendicular to the basal plane of the crystal, we control the inversion symmetry breaking and, hereby, tune the nonlinear conversion efficiency. Strong tunability of the nonlinear response is observed throughout the energy range (E ∼ 1.25-1.47 eV) probed by measuring the second-harmonic response at E, spectrally detuned from both the A- and B-exciton resonances. A 60-fold enhancement of the second-order nonlinear signal is obtained for emission at E = 2.49 eV, energetically detuned by ΔE = E - E = -0.26 eV from the C-resonance (E = 2.75 eV). The pronounced spectral dependence of the electric-field-induced second-harmonic generation signal reflects the bandstructure and wave function admixture and exhibits particularly strong tunability below the C-resonance, in good agreement with density functional theory calculations. Moreover, we show that the field-induced second-harmonic generation relies on the interlayer coupling in the bilayer. Our findings strongly suggest that the strong tunability of the electric-field-induced second-harmonic generation signal in bilayer transition metal dichalcogenides may find applications in miniaturized electrically switchable nonlinear devices.
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