An accurate quantitative description of the Auger recombination rate in silicon as a function of the dopant density and the carrier injection level is important to understand the physics of this fundamental mechanism and to predict the physical limits to the performance of silicon based devices. Technological progress has permitted a near suppression of competing recombination mechanisms, both in the bulk of the silicon crystal and at the surfaces. This, coupled with advanced characterization techniques, has led to an improved determination of the Auger recombination rate, which is lower than previously thought. In this contribution we present a systematic study of the injection-dependent carrier recombination for a broad range of dopant concentrations of high-purity n-type and p-type silicon wafers passivated with state-of-the-art dielectric layers of aluminum oxide or silicon nitride. Based on these measurements, we develop a general parametrization for intrinsic recombination in crystalline silicon at 300 K consistent with the theory of Coulomb-enhanced Auger and radiative recombination. Based on this improved description we are able to analyze physical aspects of the Auger recombination mechanism such as the Coulomb enhancement
Chalcopyrite solar cells achieve efficiencies above 23%. The latest improvements are due to post‐deposition treatments (PDT) with heavy alkalis. This study provides a comprehensive description of the effect of PDT on the chemical and electronic structure of surface and bulk of Cu(In,Ga)Se2. Chemical changes at the surface appear similar, independent of absorber or alkali. However, the effect on the surface electronic structure differs with absorber or type of treatment, although the improvement of the solar cell efficiency is the same. Thus, changes at the surface cannot be the only effect of the PDT treatment. The main effect of PDT with heavy alkalis concerns bulk recombination. The reduction in bulk recombination goes along with a reduced density of electronic tail states. Improvements in open‐circuit voltage appear together with reduced band bending at grain boundaries. Heavy alkalis accumulate at grain boundaries and are not detected in the grains. This behavior is understood by the energetics of the formation of single‐phase Cu‐alkali compounds. Thus, the efficiency improvement with heavy alkali PDT can be attributed to reduced band bending at grain boundaries, which reduces tail states and nonradiative recombination and is caused by accumulation of heavy alkalis at grain boundaries.
Using aluminum oxide (Al2O3) films deposited by atomic layer deposition (ALD), the dominant passivation mechanisms at the c-Si/Al2O3 interface, as well as the chemical composition of the interface region, are investigated. The excellent surface passivation quality of thin Al2O3 films is predominantly assigned to a high negative fixed charge density of Qf = − (4 ± 1) × 1012 cm−2, which is located within 1nm of the Si/Al2O3 interface and is independent of the layer thickness. A deterioration of the passivation quality for ultrathin Al2O3 layers is explained by a strong increase in the interface state density, presumably due to an incomplete reaction of the trimethyl-aluminum (TMA) molecules during the first ALD cycles. A high oxygen-to-aluminum atomic ratio resulting from the incomplete adsorption of the TMA molecules is suggested as a possible source of the high negative charge density Qf at the Si/Al2O3 interface.
Summary1. Ridges of tropical mountains often differ strikingly from neighbouring ravines in terms of forest structure, productivity and species composition. This heterogeneity is poorly understood despite its critical role in biodiversity maintenance, carbon and nutrient budgets. 2. We examined measures of tree biomass and productivity, foliage and litter quality (nutrient concentrations, specific leaf mass, phenolics), herbivory and leaf litter decomposition in each six plots laid out in upper and lower slope position in a tropical montane moist forest in southeastern Ecuador. 3. Productivity, quality of foliage and litter as well as herbivory were significantly lower in upper slope position, and closely correlated with soil nutrient concentrations and accumulated humus. The decomposition of upper slope leaf litter (decomposition rate k) was substantially lower than in litter from lower slope forest, whereas the site of decomposition (slope position) only had a marginal effect on the decomposition rate. 4. Our results suggest that the differences in stand structure, productivity, foliar quality, herbivory and decomposition between slope positions are ultimately due to stronger nutrient limitations in upper slope forest. We propose a general conceptual model that explains origin and maintenance of contrasting forest types along topographical gradients through down-slope fluxes of nutrients and water, and a nutrient-driven positive feedback cycle.
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