A number of recent studies have shown that the non-radiative voltage losses in organic solar cells can be suppressed in systems with low energetic offsets between donor and acceptor molecular states, but the physical reasons underpinning this remain unclear. Here, we present a systematic study of 18 different donor:acceptor blends to determine the effect that energetic offset has on both radiative and non-radiative recombination of the charge transfer (CT) state. We find that for certain blends, low offsets result in hybridization between charge-transfer and lowest donor or acceptor exciton states, which leads to a strong suppression in the non-radiative voltage loss to values as low as 0.23V associated with an increase in the luminescence of the CT state. Further, we extend a two-state CT-state recombination model to include the interaction between CT and first excited states, which allows us to explain the low non-radiative voltage losses as an increase in the effective CT to ground state oscillator strength due to the intensity borrowing mechanism. We show that low non-radiative voltage losses can be achieved in material combinations with a strong electronic coupling between CT and first excited states, and where the lower band gap material has a high oscillator strength for transitions from the excited state to the ground state. Finally, from our model we propose that achieving very low non-radiative voltage losses may come at a cost of higher overall recombination rates, which may help to explain the generally lower FF and EQE of highly hybridized systems.

The development of nonfullerene acceptors (NFAs), which are used to replace fullerene derivatives in organic solar cells (OSCs) due to their extended light absorption and tunable energy levels, has seen impressive progress in the past few years. [1][2][3][4] A range of new NFAs with different building blocks and geometrical dimensions has been designed to boost the power conversion efficiency (PCE) of OSCs. Among the highest performing NFAs, linear rod-like acceptor-donor-acceptor (A-D-A) structures incorporating fused ladder-type aromatics have attracted much interest. Common donor units include 4,9-dihydro-s-indaceno[1,2-b:5,6-b′]dithiophene (IDT) [5][6][7][8][9] and 6,12-dihydro-dithienoindeno [10][11][12][13][14][15][16][17][18] In both cases, the fused core facilitates π-electron delocalization and improves the π-π stacking between molecules, hence enhancing the intrinsic charge carrier mobility.In 2015, Zhan and coworkers reported a new NFA, 3,9-bis(2-methylene-(3-(1,1-dicyanomethylene)-indanone))-5,5,11,11--b′]dithiophene (ITIC) (Scheme 1), which is comprised an electron-donating IDTT-based core flanked by two electron-withdrawing units of 1,1-dicyanomethylene-3-indanone (IC), that exhibited a promising PCE of 6.8% at that time. [10] Since then, many strategies have been applied to modify the structure of ITIC in order to adjust the absorption spectra and energy levels to further improve the PCE, for example, by changing the side chains, [17,18] extending the conjugation length, [19][20][21][22] and substituting the end acceptor groups. [13][14][15][16] To date, a few systems based on these NFAs have achieved a PCE of over 10%. [5,[13][14][15]18,20,22] However, it is noticeable that in all cases these NFAs incorporate phenylalkyl or thienylalkyl side chains as the solubilizing groups on the fused core. These aryl-based side chains facilitate the synthesis of the IDTT core under Friedel-Crafts conditions via the formation of stable triaryl cations. However, since the nature of the side chains has a

This study reports the development of copper(I) thiocyanate (CuSCN) hole-transport layers (HTLs) processed from aqueous ammonia as a novel alternative to conventional n-alkyl sulfide solvents. Wide bandgap (3.4–3.9 eV) and ultrathin (3–5 nm) layers of CuSCN are formed when the aqueous CuSCN–ammine complex solution is spin-cast in air and annealed at 100 °C. X-ray photoelectron spectroscopy confirms the high compositional purity of the formed CuSCN layers, while the high-resolution valence band spectra agree with first-principles calculations. Study of the hole-transport properties using field-effect transistor measurements reveals that the aqueous-processed CuSCN layers exhibit a fivefold higher hole mobility than films processed from diethyl sulfide solutions with the maximum values approaching 0.1 cm2 V−1 s−1. A further interesting characteristic is the low surface roughness of the resulting CuSCN layers, which in the case of solar cells helps to planarize the indium tin oxide anode. Organic bulk heterojunction and planar organometal halide perovskite solar cells based on aqueous-processed CuSCN HTLs yield power conversion efficiency of 10.7% and 17.5%, respectively. Importantly, aqueous-processed CuSCN-based cells consistently outperform devices based on poly(3,4-ethylenedioxythiophene) polystyrene sulfonate HTLs. This is the first report on CuSCN films and devices processed via an aqueous-based synthetic route that is compatible with high-throughput manufacturing and paves the way for further developments

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The ability to tune the electronic properties of soluble wide bandgap semiconductors is crucial for their successful implementation as carrier-selective interlayers in large area opto/electronics. Herein the simple, economical, and effective p-doping of one of the most promising transparent semiconductors, copper(I) thiocyanate (CuSCN), using C 60 F 48 is reported. Theoretical calculations combined with experimental measurements are used to elucidate the electronic band structure and density of states of the constituent materials and their blends. Obtained results reveal that although the bandgap (3.85 eV) and valence band maximum (−5.4 eV) of CuSCN remain unaffected, its Fermi energy shifts toward the valence band edge upon C 60 F 48 addition-an observation consistent with p-type doping. Transistor measurements confirm the p-doping effect while revealing a tenfold increase in the channel's hole mobility (up to 0.18 cm 2 V −1 s −1 ), accompanied by a dramatic improvement in the transistor's bias-stress stability. Application of CuSCN:C 60 F 48 as the hole-transport layer (HTL) in organic photovoltaics yields devices with higher power conversion efficiency, improved fill factor, higher shunt resistance, and lower series resistance and dark current, as compared to control devices based on pristine CuSCN or commercially available HTLs.