No abstract

In this study, a 30 nm gate length double-gate InAlN/GaN on 4h-SiC substrate high-electron-mobility transistor is proposed. Different electrical characteristics such as DC, AC, capacity and noise analysis was performed through TCAD device simulations. The proposed device exhibited maximum drain current of 2.15 A/mm, transconductance of 1308 mS/mm, (350/ 610) GHz of FT/FMAX and maximum noise figure of NFMax=9.5 dB at 1 THz. Thus, the low noise high electron mobility transistor (LNA-HEMT) amplifier has been designed considering main characteristics of power with new structure, in terms of temperature and low noise figure effect. Adopting the backup bulk in the optimization procedure the proposed device obtained an outstanding performance with appropriate low power consumption for GEO satellite application