Filament-type HfO2-based RRAM has been considered as one of the most promising candidates for future non-volatile memories. Further improvement of the stability, particularly at the “OFF” state, of such devices is mainly hindered by resistance variation induced by the uncontrolled oxygen vacancies distribution and filament growth in HfO2 films. We report highly stable endurance of TiN/Ti/HfO2/Si-tip RRAM devices using a CMOS compatible nanotip method. Simulations indicate that the nanotip bottom electrode provides a local confinement for the electrical field and ionic current density; thus a nano-confinement for the oxygen vacancy distribution and nano-filament location is created by this approach. Conductive atomic force microscopy measurements confirm that the filaments form only on the nanotip region. Resistance switching by using pulses shows highly stable endurance for both ON and OFF modes, thanks to the geometric confinement of the conductive path and filament only above the nanotip. This nano-engineering approach opens a new pathway to realize forming-free RRAM devices with improved stability and reliability.

Material layers at electrode/semiconductor interfaces are fundamental for the photovoltaic properties of polymer solar cells. The relationship between open‐circuit voltage (VOC) and the work function (φ) of these interface layers is still a matter of debate. Simulations, together with experiments on over more than 20 cell architectures based on P3HT:PC60BM, enabled us to analyze the physical dependence of VOC on φ. In particular, when the work function of the contacts is well inside the gap we observe that performance depends strongly on even small variations of φ. On the other hand, when it approaches the energy levels of the semiconducting polymers, device operation becomes the most efficient and less sensitive to variations in φ. Furthermore, by varying the Gaussian density of states (DOS) of the active blend we were able to show that VOC performance depends significantly also on the DOS. Our study based on the simultaneous variation of transport layers represents a promising method to optimize the design and performance of polymer solar cells. © 2015 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2015, 53, 690–699

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The aim of this work is to present a consistent model for simulation of organic solar cells (OPV) with a correct description of mobility, density of state, organic-metal contacts, and exciton. We simulate the photoconversion by means of an integration of the optical and electrical part: light absorption is calculated with a Transfer Matrix Model and the charge transport is computed using Drift Diffusion approach including the effect of energetically disorder materials. Most model parameters are directly taken from experiment. The model is used to study the effect of energetic disordered materials and cell thickness on the performance of the cell in terms of short circuit current, open circuit voltage, and fill factor. Based on the results of this model, it will be possible to design and predict the optimal thickness of OPV toward higher efficiencies. (C) 2014 AIP Publishing LLC