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A CMOS D-band 135-150 GHz transmitter is presented with integrated digital control and on-chip antenna. The proposed transmitter employs an IF feed-forward compensation scheme which improves the soft gain compression of the power amplifier by 5.1dB to provide an overall more linear AM-AM profile allowing reduced power back-off for modulation schemes with a high peak-to-average ratio. The proposed D-band transmitter consumes 255mW and occupies 2000 x 1500 um of silicon area. The proposed transmitter delivers a 0.4 dBm EIRP and a saturated power on chip of 13.2 dBm. The transmitter has a peak PAE of 8.2% with power delivered to the antenna and a peak PAE of 0.4% when considering radiated power.

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This brief discusses an oscillator-based capacitive 3D touch sensing circuit for mobile devices. The proposed 3D touch sensor uses correlated double sampling (CDS) to achieve a high sensing resolution in Z direction and employs bootstrapping circuitry to reduce the mobile screen's inter-channel-coupling effects. Additionally, to reduce chip area and assembly, the sensing oscillator is implemented with inverter-based active resonators instead of using either on or off chip inductors. The prototyped 3D touch sensor is fabricated using 65-nm CMOS process technology and consumes an area of 2mm 2 , with 2.3mW power consumption from a 1V power supply. Measured together with a 3.4" HTC standard mobile screen, the sensor achieves an 11cm Z-direction sensing range with 1cm resolution, demonstrating the potential implementation of 3D finger position sensing in mobile device.