We report on violet-emitting III-nitride light-emitting diodes (LEDs) grown on bulk GaN substrates employing a flip-chip architecture. Device performance is optimized for operation at high current density and high temperature, by specific design consideration for the epitaxial layers, extraction efficiency, and electrical injection. The power conversion efficiency reaches a peak value of 84% at 85 °C and remains high at high current density, owing to low current-induced droop and low series resistance.

High power light emitting diodes (LEDs) continue to increase in output flux with the best III‐nitride based devices today emitting over 150 lm of white, cyan, or green light. The key design features of such products will be covered with special emphasis on power packaging, flip‐chip device design, and phosphor coating technology. The high‐flux performance of these devices is enabling many new applications for LEDs. Two of the most interesting of these applications are LCD display backlighting and vehicle forward lighting. The advantages of LEDs over competing lighting technologies will be covered in detail.

The performance of III‐nitride based high‐power light emitting diodes (LEDs) is reviewed. Direct color high‐power LEDs with 1 × 1 mm2 chip size in commercial LUXEON® Rebel packages are shown to exhibit external quantum efficiencies at a drive current of 350 mA ranging from ∼60% at a peak wavelength of ∼420 nm to ∼27% at ∼525 nm. The short wavelength blue LED emits ∼615 mW at 350 mA and >2 W at 1.5 A. The green LED emits ∼110 lm at 350 mA and ∼270 lm at 1.5 A. Phosphor‐conversion white LEDs (1 × 1 mm2 chip size) are demonstrated that emit ∼126 lm of white light when driven at 350 mA and 381 lm when driven at 1.5 A (Correlated Color Temperature, CCT ∼ 4700 K). In a similar LED that employs a double heterostructure (DH) insign instead of a multi‐quantum well (MQW) active region, the luminous flux increases to 435 lm (CCT ∼ 5000 K) at 1.5 A drive current. Also discussed are experimental techniques that enable the separation of internal quantum efficiency and extraction efficiency. One technique derives the internal quantum efficiency from temperature and excitation‐dependent photoluminescence measurements. A second technique relies on variable‐temperature electroluminescence measurements and enables the estimation of the extraction efficiency. Both techniques are shown to yield consistent results and indicate that the internal quantum efficiency of short wavelength blue (λ ∼ 420 nm) high‐power LEDs is as high as 71% even at a drive current of 350 mA. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

No abstract

Data are presented demonstrating the operation of transparent-substrate (TS) (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes (LEDs) whose efficiency exceeds that afforded by all other current LED technologies in the green to red (560–630 nm) spectral regime. A maximum luminous efficiency of 41.5 lm/W (93.2 lm/A) is realized at λ∼604 nm (20 mA, direct current). The TS (AlxGa1−x)0.5In0.5P/GaP LEDs are fabricated by selectively removing the absorbing n-type GaAs substrate of a p-n (AlxGa1−x)0.5In0.5P double heterostructure LED and wafer bonding a ‘‘transparent’’ n-GaP substrate in its place. The resulting TS (AlxGa1−x)0.5In0.5P/GaP LED lamps exhibit a twofold improvement in light output compared to absorbing-substrate (AS) (AlxGa1−x)0.5In0.5P/GaAs lamps.