We show spin lifetimes of 12.6 ns and spin diffusion lengths as long as 30.5 µm in single layer graphene non-local spin transport devices at room temperature. This is accomplished by the fabrication of Co/MgO-electrodes on a Si/SiO2 substrate and the subsequent dry transfer of a graphenehBN-stack on top of this electrode structure where a large hBN flake is needed in order to diminish the ingress of solvents along the hBN-to-substrate interface. Interestingly, long spin lifetimes are observed despite the fact that both conductive scanning force microscopy and contact resistance measurements reveal the existence of conducting pinholes throughout the MgO spin injection/detection barriers. The observed enhancement of the spin lifetime in single layer graphene by a factor of 6 compared to previous devices exceeds current models of contact-induced spin relaxation which paves the way towards probing intrinsic spin properties of graphene.

We report on the first systematic study of spin transport in bilayer graphene (BLG) as a function of mobility, minimum conductivity, charge density and temperature. The spin relaxation time τ s scales inversely with the mobility µ of BLG samples both at room temperature (RT) and at low temperature (LT). This indicates the importance of D'yakonov -Perel' spin scattering in BLG. Spin relaxation times of up to 2 ns at RT are observed in samples with the lowest mobility. These times are an order of magnitude longer than any values previously reported for single layer graphene (SLG). We discuss the role of intrinsic and extrinsic factors that could lead to the dominance of D'yakonov-Perel' spin scattering in BLG. In comparison to SLG, significant changes in the carrier density dependence of τ s are observed as a function of temperature.

We demonstrate injection, transport and detection of spins in spin valve arrays patterned in both copper based chemical vapor deposition (Cu-CVD) synthesized wafer scale single layer (SLG) and bilayer graphene (BLG). We observe spin relaxation times comparable to those reported for exfoliated graphene samples demonstrating that CVD specific structural differences such as nanoripples and grain boundaries do not limit spin transport in the present samples. Our observations make Cu-CVD graphene a promising material of choice for large scale spintronic applications. KEYWORDS Spin transport, Hanle precession, graphene, CVD growth, rippleHigh charge mobility, (1) small spin-orbit coupling, (2) negligible hyperfine interaction, (3) the electric field effect (4) and last but not least the ability to sustain large current densities (5) make graphene an exceptional material for spintronic applications. The demonstration of micrometer long spin relaxation length in exfoliated SLG and BLG even at room temperature (RT) (6)-(12) and spin relaxation times in the order of nanoseconds (11)-(12) may pave the way to realize several of the recently proposed spin based device concepts. (13)- (15) However, for realistic device applications it remains to be seen, if such impressive spin transport properties can also be achieved in wafer scale CVD graphene. Equally important, spin transport studies based on micromechanically exfoliated graphene sheets are often too slow for the quick exploration of the basic spin properties of graphene and for testing potential device architectures. The recent progress in the Cu-based CVD growth of graphene has a strong impact on charge based graphene device applications. (16) However, CVD graphene has a large number of structural differences when compared to exfoliated graphene such as grain boundaries, (17) defects like pentagons, heptagons, octagons, vacancies, 1D line charges (18) and in the case of bilayer graphene possibly interlayer stacking faults. (19)-(20) In addition, the current growth and transfer process introduces residual catalysts, wrinkles, quasi-periodic nanoripple arrays and new classes of organic residues. (19) Despite all of these defects, charge mobilities in CVD graphene field effect transistors (FETs) have been comparable to what has been reported for most exfoliated graphene FETs on Si/SiO 2 substrates. (21) 3 Whether this synthesis route will also play an important role for spin transport studies and large scale spin-based device applications depends on how the same defects affect the spin relaxation times.In this Letter, we demonstrate spin transport in Cu-CVD grown SLG and BLG transferred onto conventional Si/SiO 2 substrates and discuss the role of nano-ripples, a ubiquitous surface structure of Cu-CVD graphene (19) . The growth and transfer of large-scale Cu-CVD graphene are the same as in Ref.(17). By controlling the post-growth annealing time of CVD graphene, we can obtain films with SLG coverage up to 95% or additional BLG coverage up to 40%. The latter...

We present a new fabrication method of graphene spin-valve devices which yields enhanced spin and charge transport properties by improving both the electrode-to-graphene and graphene-to-substrate interface. First, we prepare Co/MgO spin injection electrodes onto Si ++ /SiO 2 . Thereafter, we mechanically transfer a graphene-hBN heterostructure onto the prepatterned electrodes. We show that room temperature spin transport in single-, bi-and trilayer graphene devices exhibit nanosecond spin lifetimes with spin diffusion lengths reaching 10 µm combined with carrier mobilities exceeding 20, 000 cm 2 /Vs.