Highly efficient gas‐diffusion barriers based on nanolaminates of alternating Al2O3 and ZrO2 layers grown at 80 °C by atomic‐layer deposition are presented. Ultralow water‐vapor permeation rates are reported, and a dramatic reduction of statistical defects on larger areas was found compared to single Al2O3 layers. This study provides a concept for the encapsulation of organic optoelectronic devices.
Gas diffusion barriers based on nanolaminates of alternating Al2O3/ZrO2 layers prepared by atomic layer deposition at 80 °C are presented. Water vapor permeation rates as low as 4.7×10−5g/(m2 day) are determined (at 70 °C and 70 % rh). Compared to single Al2O3 encapsulation layers, a reduced density of statistical defects is found. The reliable nanolaminate encapsulation is demonstrated by OLED lifetime measurements.
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