Highly (002)-oriented and columnar-grained ZnO thin films were prepared by radio frequency magnetron sputtering at room temperature. The Pt∕ZnO∕Pt devices exhibit reversible and steady bistable resistance switching behaviors with a narrow dispersion of the resistance states and switching voltage. Only a low forming electric field was required to induce the resistive switching characteristics. The resistance ratios of high resistance state to low resistance state were in the range of 3–4 orders of magnitude within 100cycles of test. It was also found that the conduction mechanisms dominating the low and high resistance states are Ohmic behavior and Poole-Frenkel emission, respectively.

In this paper, we report on the formation and rupture of Ag nanofilament on planar Ag/TiO2/Pt cells using visual observation. During the forming process, the filament tends to stay very thin. Specifically, it is so thin that it breaks up into a chain of nanospheres (according to Rayleigh instability) right after the formation has been completed. Similar mechanical breakup may also impact vertically stacked cells, causing reliability concerns.

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Chinese patients in Hong Kong with the nondeletional type of hemoglobin H disease have more severe disease than those with the deletional type of the disease. Iron overload is a major cause of disability in both forms of the disease.