An Amplitude Modulated Continuous Wave (AMCW) radar system is proposed that uses both the phase from the envelope and carrier to achieve micrometer accuracy distance measurement. The system has the benefit of using only two frequencies instead of an entire frequency band which is the case with FMCW radars. Many radar systems can therefore be used in a small area without risking interference. An experimental radar setup at 78 GHz is measured and verified to have a measurement error magnitude of less than 10 micrometer. This system is suitable for modern manufacturing and industry.

A chipset for high datarate polymer microwave fiber (PMF) communication is described. It consist of a PAM-4 RF-DAC and power detector (PD) and is fabricated using a commercial 130 nm SiGe BiCMOS process. A link measurement is performed over a one meter long PMF verifying that the link can support data rates up to 20 Gbps using PAM-4, with a bit error rate (BER) of < 10 −12 . The RF-DAC covers frequencies between 120-160 GHz, with a peak output power of 4 dBm. It has a stacked transistor pair as core and includes a frequency doubler at the LO input and a three stage amplifier at the output. The PD includes an amplifier and an active balun to suppress the fundamental frequency. Both circuits occupy only 1.54 mm 2 combined, including pads. The high data-rate, energy efficiency, low cost and robustness of the link makes is suitable for short range (< 10 meters) device-to-device communication.

In this work a high speed PAM-4 link for polymer microwave fiber (PMF) communication at D-band (110-170GHz) is presented using a commercial 130 nm SiGe BiCMOS process. Link measurements are performed over a one meter long foamcladded PMF which verifies that the link can support data rates up to 30 Gbps with a bit error rate (BER) of 3 * 10 −8 . The transmitter is RF-DAC based including and LO multiplier and a six stage amplifier. The receiver consist of an LNA and a power detector (PD). The DC power consumption is 143 mW for the transmitter and 126 mW for the receiver.

A high data rate RF-DAC and a power detector (PD) are designed and fabricated in a 250 nm indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. A communication link using the Tx-Rx over polymer microwave fiber (PMF) is measured. The link consists of a pulse amplitude modulation (PAM) modulator and a PD as a demodulator, as well as a one-meter-long dielectric waveguide. The working frequency range of the complete link is verified to be 110–150 GHz. The peak output power of the PAM modulator is 5 dBm, and it has a −3 dB bandwidth of 43 GHz. The PD consists of a parallel connected common emitter configured transistor and a common base configured transistor to suppress the odd-order harmonics at the PD’s output, as well as a stacked transistor to amplify the output signal. Tx and Rx chips, including pads, occupy a total area of only 0.83 mm2. The PMF link can support a PAM-4 signal with 22 Gbps data transmission, and a PAM-2 signal with 30 Gbps data transmission, with a bit error rate (BER) of <10−12, with demodulation performed in real time. Furthermore, the energy efficiency for the link (Tx + Rx) is 4.1 pJ/bit, using digital data input and receiving PAM-2 output (5.6 pJ/bit for PAM-4).

ultra high data rate link is presented and characterized. The circuits are realized in a commercial 130 nm silicon germanium (SiGe) BiCMOS process. The 3-dB bandwidth for both transmitter (Tx) and receiver (Rx) is between 125 -165 GHz, resulting in a 40 GHz bandwidth. The communication link has demonstrated transmissions up to 102 Gbps using 8-phase shift keying (PSK) modulation over a one meter long foam-cladded polymer microwave fiber (PMF) with a bit error rate (BER) of 2.1×10 −3 . Using direct quadrature phase shift keying (QPSK), 56 Gbps was reached with a BER < 10 −12 . Total chip area for Tx and Rx combined, including pads, is 4.2 mm 2 .