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With IC technology nodes >20 nm, chemical mechanical polishing (CMP) of Co-based Cu interconnection has changed to one-step polishing, which requires a rapid removal rate (RR) of Cu while controlling the height differences of Cu surface. Co as the barrier material also requires a lower RR to ensure a high Cu/Co RR selection ratio. Choosing the appropriate inhibitor in the slurry is extremely important. TTA was thoroughly examined in this study for its ability to prevent corrosion on Cu film. The results showed that TTA can effectively inhibit the removal of Cu under both dynamic and static conditions, which was confirmed by scanning electron microscopy and atomic force microscopy. TTA's corrosion inhibition mechanism was further revealed by electrochemical, quantum chemical calculation, UV-Visible, and X-ray photoelectron spectroscopy tests. It was found that TTA can inhibit corrosion of Cu by physical and chemical adsorption on the Cu surface. At the same time, it was also found TTA can inhibit corrosion of Co by forming Co-TTA and promoting the conversion of Co(OH)2 to Co3O4, and a Cu/Co removal rate selection ratio of 104 was obtained, which provides a suitable corrosion inhibitor for the polishing of Co-based Cu interconnection CMP and has broad application prospects.