Growth conditions of metalorganic chemical vapor deposition have been investigated for the purpose of obtaining abrupt InGaP/GaAs interfaces. Photoluminescence (PL) spectra of InGaP/GaAs quantum wells (QWs) are used to characterize these interfaces. The conventional gas switching sequence, i.e., simultaneously switching on group-III and -V gases, is found to provide only a broad peak at wavelengths longer than those of near-band-edge emissions from GaAs in the PL spectrum of the InGaP/GaAs QW. PL studies using QWs having an AlGaAs barrier, for example, AlGaAs/GaAs/InGaP and InGaP/GaAs/AlGaAs, show that the GaAs-on-InGaP interface is responsible for this broad peak. A novel gas switching sequence where group-III gas is switched on first results in sharp peaks corresponding to 5.7- and 2.8-nm-thick wells in the PL spectrum of InGaP/GaAs QW. Preflow of TMGa on InGaP surface is effective in suppressing the substitution of P atoms in InGaP to As atoms at the GaAs-on-InGaP interface.

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Co-implantation effects of N, P, and As are studied for Si-implanted GaAs by the Hall effect and photoluminescence measurements. The P co-implantation enhances and homogenizes the activation efficiency of the implanted Si, and decreases photoluminescence peak intensities of the SiAs and the GaAs acceptors. It also suppresses the variation of the Si activation efficiency among the crystal ingots by half. These results indicate that P co-implantation is a promising method for fabricating active layers of high-performance GaAs large scale integrated circuits.

We report the formation of Schottky contacts, with a barrier height as large as 0.9 eV, on epitaxial InGaP grown on GaAs wafers. The contacts are formed by removing surface oxide layers. Thermal reactions between Ti and InGaP and/or surface treatment with buffered hydrogen fluoride solution are effective for selective removal of surface oxide. These methods do not decrease the InGaP film thickness. They are promising for fabricating GaAs metal-semiconductor field-effect transistors with a thin InGaP film for increased barrier height.