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Linewidth control and resolution have become increasingly more difficult for optical lithography in the one micron region because of reflective substrates and severe topography. Recently, much attention has been given to spin -on Antireflective Coatings (ARC) as an easily implemented solution to standing waves and scattered reflections. This leads to improved linewidth control and better resolution for the same aligner and resist system. This paper investigates ARC undercutting and its effect on the final etched image for popular anisotropic plasmas as used to etch polysilicon gates, silox contact holes, and aluminium interconnections.Brewer ARC -PN4, ARC -PN2, and Waycoat 204 positive photoresist were used and imaged using a THE 800 -SLR l0X stepper.It was found that final etched features were insensitive to spin -on ARC baking and developing conditions making this a useful technique for production in the one micron region.

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