The 64b PowerPC RISC microprocessor previously described is migrated from a 0.22µm SOI technology to a 0.18µm SOI technology [1]. Key features of the 0.77 scaled 1.5V technology are 0.08µm NFET channel lengths, 7 layer Cu metallization with low-e dielectric, low dose SOI substrate for improved material quality and productivity, and local interconnect. Dual gate oxide provides high I/O voltage compatibility. As this chip is a migration only 6 levels of metal and stacked devices for high voltage I/O were used.