High quality epitaxial AlN and AlxGa1−xN layers have been grown by organo-metallic vapor-phase epitaxy on single crystal a-face AlN substrates. Here we report the characterization of these layers using Rutherford backscattering/ion channeling spectroscopy, atomic force microscopy, double crystal x-ray diffraction, and preliminary electrical results. Ion channeling along the [112̄0] axis gave a minimum yield of 1.5% for an AlN layer and 2.2% for an Al0.5Ga0.5N, indicating excellent crystal quality. A resistivity of 20 Ω cm and a mobility of 20 cm2/V s was measured in a Si-doped, 1-μm-thick Al0.5Ga0.5N grown epitaxially on the AlN substrates.

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Growth kinetics of zinc (tris) thiourea sulphate (ZTS) crystals investigated as a function of supersaturation is reported in this communication. Crystal growth rates were investigated normal to the (100), (010) and (001) faces under growth conditions employed for bulk crystal growth. The growth rates normal to (010) and (100) were found to follow the continuous growth model (R G = Cσ) with respect to the supersaturation whereas the growth rates normal to (001) was found to satisfy birth and spread (B+S) model (R G = Aσ 5/6 exp(-B/σ)). The growth rates observed normal to the studied face are in agreement with the growth mechanism predicted from the estimated α (Jackson) factor.

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