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We report detailed measurements of gold concentration profiles in 〈100〉, p-type silicon. The gold has been introduced by ion implantation and diffused in the temperature range 1073–1473 K and for times ranging from 60 s to 100 h. The resistivity profiles have been converted into gold concentration profiles by using the recently measured value of the entropy factor for the ionization of the gold donor level. The measured profiles and their time dependence can be accounted for by the kick-out diffusion mechanism. The activation energies for the effective diffusion coefficient and for the gold substitutional concentration are 1.7±0.1 and 1.6±0.1 eV, respectively. The resulting flux of silicon self-interstitials is thus described by an activation energy of 3.3±0.1 eV.

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Rutherford backscattering spectrometry and spreading resistance techniques have been used to determine the concentration profiles of gold implanted on and diffused in p-type silicon. The measurement of the gold concentration is possible by the solution of the charge neutrality condition and thus it requires the determination of the entropy factor X associated with the ionization of the gold donor level. The value of 28±2 compares well with the latest determination of X obtained by using rather complex techniques.

ChemInform Abstract It is demonstrated that implantation of silicon wafers and devices with Au ions and thermal processing in the 1073-1243 K temp. range allows a good control of the lifetime in a rather wide range of values and that flat Au profiles can be generated across the silicon wafers in short processing time.