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Modelling and experimental results on IBC SHJ solar cells are presented in this paper. Different rear emitter designs are studied by 2D simulation and tested on experimental devices. IBC SHJ cells are fabricated with the SLASH process based on laser patterning steps, and the performance of such devices is shown to be limited by the rear emitter geometry (contacting scheme and total emitter fraction). On one hand IBC SHJ cells have to be carefully designed concerning the contacting scheme due to distributed series resistance effects. On the other hand SHJ technology allows a very high surface passivation level, and this reduces the influence of the emitter fraction on the cells performances.

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Abstract. Silicon heterojunction (SHJ) interdigitated back-contacted (IBC) solar cells currently hold the world record for conversion efficiency of silicon based, single junction solar cells. In order to use this technology for industrial applications, cost-effective strategies for amorphous silicon (a-Si:H) patterning of the back surface field (BSF) and emitter have to be developed. We propose a process flow that eliminates the need to align a-Si:H deposition steps. This is accomplished by the use of a low power, ultraviolet laser to transform an i-n-i-p a-Si:H layer stack into a fully working BSF. This process is referred to here as compensation lasering. In this manuscript, we first show a proof of concept of the compensation laser process using front and rear contacted SHJ solar cells. We then use Raman and SIMS characterization to show that the laser affects boron concentration to form a working BSF. Finally, we present precursors of a SHJ-IBC. Implied VOC values of 732 mV have been achieved showing the potential of this technique as an SHJ-IBC process.