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Using angle and time resolved molecular beam techniques, an investigation of the low coverage adsorptiondesorption kinetics of NO on Pt(l!!) is made. The experiments are carried out over a crystal temperature range of 300 K < T, < 900 K. For T, > 500 K, the sticking probability s > 0.9. NO adsorbs molecularly with little dissociation « 5%). The desorption rate is found to be strongly dependent on the incident beam flux and trace amounts of chemisorbed oxygen « 1%) on the surface. These findings suggest that steps play the dominant role in low coverage kinetics for a nominally flat crystal. We present a model which incorporates the effect of steps, explains the nonlinearity of the desorption kinetics, and reconciles the disagreement between these results and previous molecular beam studies.

Epitaxial silicon films have been grown on single-crystal Si (100) substrates by evaporation from an e-gun source in ultrahigh vacuum and have been doped with gallium and with aluminum from separate oven sources. Gallium doping profiles have been controlled accurately for substrate temperatures in the range 600–800 °C and for carrier densities in the range 1014–5×1017 cm−3. Examples are given of abrupt changes in doping level. Measured drift mobilities in the films are within 15% of values for bulk silicon. Crystallographic properties of the films are comparable to those of the substrates and are suitable for device applications. Films doped with aluminum exhibit comparable electrical and crystallographic properties, but good control of the doping profile has not been achieved for the range of parameters studied.

It has been found that the kind and amount of damage produced in silicon following Ar+ ion bombardment at 1.0 keV and the annealing properties of the damage depend strongly on the temperature at which the sputtering is done in the range 25–800 °C. Some of these differences in damage are not evident with surface-sensitive techniques such as LEED, RHEED, or AES, but have been revealed by transmission electron microscopy and by Rutherford ion backscattering. TEM examination of substrates annealed at 800 °C after being sputtered at temperatures in the range 25–800 °C shows an increase in the density and the size of crystal defects with increasing sputtering temperature. Rutherford ion backscattering shows an increase in silicon disorder and in retained argon with increasing sputtering temperature. These results are similar to observations reported for ion implantation at higher energies. Models for damage mechanisms are discussed briefly. It is concluded that for Ar+ ion sputter cleaning of silicon, the silicon should be kept at room temperature or below during sputtering to minimize residual surface damage after annealing.

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